中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE

文献类型:期刊论文

作者Wang, K ; Gu, Y ; Fang, X ; Zhou, L ; Li, C ; Li, HSBY ; Zhang, YG
刊名JOURNAL OF INFRARED AND MILLIMETER WAVES
出版日期2012
卷号31期号:5页码:385-+
关键词compound semiconductor molecular beam epitaxy InAlGaAs X-ray diffraction photoluminescence
ISSN号1001-9014
通讯作者Zhang, YG (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.
中文摘要Properties of quaternary InAlGaAs alloys prepared by gas source MBE growth have been investigated with high resolution X-ray diffraction rocking curves, photoluminescence and Hall measurements. X-ray rocking curves show that all the samples are well match
学科主题Optics
收录类别2012SCI-031
原文出处10.3724/SP.J.1010.2012.00385
语种英语
公开日期2013-04-17
源URL[http://ir.sim.ac.cn/handle/331004/114817]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Wang, K,Gu, Y,Fang, X,et al. Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE[J]. JOURNAL OF INFRARED AND MILLIMETER WAVES,2012,31(5):385-+.
APA Wang, K.,Gu, Y.,Fang, X.,Zhou, L.,Li, C.,...&Zhang, YG.(2012).Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE.JOURNAL OF INFRARED AND MILLIMETER WAVES,31(5),385-+.
MLA Wang, K,et al."Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE".JOURNAL OF INFRARED AND MILLIMETER WAVES 31.5(2012):385-+.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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