Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE
文献类型:期刊论文
作者 | Wang, K ; Gu, Y ; Fang, X ; Zhou, L ; Li, C ; Li, HSBY ; Zhang, YG |
刊名 | JOURNAL OF INFRARED AND MILLIMETER WAVES
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出版日期 | 2012 |
卷号 | 31期号:5页码:385-+ |
关键词 | compound semiconductor molecular beam epitaxy InAlGaAs X-ray diffraction photoluminescence |
ISSN号 | 1001-9014 |
通讯作者 | Zhang, YG (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. |
中文摘要 | Properties of quaternary InAlGaAs alloys prepared by gas source MBE growth have been investigated with high resolution X-ray diffraction rocking curves, photoluminescence and Hall measurements. X-ray rocking curves show that all the samples are well match |
学科主题 | Optics |
收录类别 | 2012SCI-031 |
原文出处 | 10.3724/SP.J.1010.2012.00385 |
语种 | 英语 |
公开日期 | 2013-04-17 |
源URL | [http://ir.sim.ac.cn/handle/331004/114817] ![]() |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Wang, K,Gu, Y,Fang, X,et al. Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE[J]. JOURNAL OF INFRARED AND MILLIMETER WAVES,2012,31(5):385-+. |
APA | Wang, K.,Gu, Y.,Fang, X.,Zhou, L.,Li, C.,...&Zhang, YG.(2012).Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE.JOURNAL OF INFRARED AND MILLIMETER WAVES,31(5),385-+. |
MLA | Wang, K,et al."Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE".JOURNAL OF INFRARED AND MILLIMETER WAVES 31.5(2012):385-+. |
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