Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application
文献类型：期刊论文
| 作者 | Ren, K ; Rao, F ; Song, ZT ; Lv, SL ; Cheng, Y ; Wu, LC ; Peng, C ; Zhou, XL ; Xia, MJ ; Liu, B ; Feng, SL |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 100期号:5页码:52105 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Ren, K (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. |
| 中文摘要 | Al2Sb2Te6 is a pseudobinary material constructed by Sb2Te3 (fast crystallization speed but thermally unstable) and Al2Te3 (thermally stable but without memory switching ability). Al2Sb2Te6 material possesses advantages of these two binary compounds showin |
| 学科主题 | Physics |
| 收录类别 | 2012SCI-212 |
| 原文出处 | 10.1063/1.3680580 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114818]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ren, K,Rao, F,Song, ZT,et al. Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application[J]. APPLIED PHYSICS LETTERS,2012,100(5):52105. |
| APA | Ren, K.,Rao, F.,Song, ZT.,Lv, SL.,Cheng, Y.,...&Feng, SL.(2012).Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application.APPLIED PHYSICS LETTERS,100(5),52105. |
| MLA | Ren, K,et al."Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application".APPLIED PHYSICS LETTERS 100.5(2012):52105. |
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