Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology
文献类型：期刊论文
| 作者 | Ning, BX ; Zhang, ZX ; Liu, ZL ; Hu, ZY ; Chen, M ; Bi, DW ; Zou, SC |
| 刊名 | MICROELECTRONICS RELIABILITY
 |
| 出版日期 | 2012 |
| 卷号 | 52期号:1页码:130-136 |
| ISSN号 | 0026-2714 |
| 通讯作者 | Ning, BX (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. |
| 中文摘要 | The effects of total ionizing dose (TID) irradiation on the inter-device and intra-device leakage current in a 180-nm flash memory technology are investigated. The positive oxide trapped charge in the shallow trench isolation (STI) oxide is responsible fo |
| 学科主题 | Engineering; Science & Technology - Other Topics; Physics |
| 收录类别 | 2012SCI-248 |
| 原文出处 | 10.1016/j.microrel.2011.07.090 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114820]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ning, BX,Zhang, ZX,Liu, ZL,et al. Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology[J]. MICROELECTRONICS RELIABILITY,2012,52(1):130-136. |
| APA | Ning, BX.,Zhang, ZX.,Liu, ZL.,Hu, ZY.,Chen, M.,...&Zou, SC.(2012).Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology.MICROELECTRONICS RELIABILITY,52(1),130-136. |
| MLA | Ning, BX,et al."Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology".MICROELECTRONICS RELIABILITY 52.1(2012):130-136. |
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