中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Superlattice-like GaSb/Sb2Te3 films for low-power phase change memory

文献类型:期刊论文

作者Lu, YG ; Song, SN ; Song, ZT ; Ren, WC ; Xiong, YL ; Rao, F ; Wu, LC ; Cheng, Y ; Liu, B
刊名SCRIPTA MATERIALIA
出版日期2012
卷号66期号:9页码:702-705
ISSN号1359-6462
关键词Phase change memory Multilayers Electric resistivity Simulation
通讯作者Lu, YG (reprint author), Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China.
中文摘要The crystallization temperature of superlattice-like GaSb/Sb2Te3 films can be easily changed by the number of interfaces and thickness ratio between GaSb and Sb2Te3 layers. The reset operation can be completed by an electric pulse as short as 20 ns for th
学科主题Science & Technology - Other Topics; Materials Science; Metallurgy & Metallurgical Engineering
收录类别2012SCI-134
原文出处10.1016/j.scriptamat.2012.01.013
语种英语
公开日期2013-04-17
源URL[http://ir.sim.ac.cn/handle/331004/114833]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Lu, YG,Song, SN,Song, ZT,et al. Superlattice-like GaSb/Sb2Te3 films for low-power phase change memory[J]. SCRIPTA MATERIALIA,2012,66(9):702-705.
APA Lu, YG.,Song, SN.,Song, ZT.,Ren, WC.,Xiong, YL.,...&Liu, B.(2012).Superlattice-like GaSb/Sb2Te3 films for low-power phase change memory.SCRIPTA MATERIALIA,66(9),702-705.
MLA Lu, YG,et al."Superlattice-like GaSb/Sb2Te3 films for low-power phase change memory".SCRIPTA MATERIALIA 66.9(2012):702-705.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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