Superlattice-like GaSb/Sb2Te3 films for low-power phase change memory
文献类型:期刊论文
作者 | Lu, YG ; Song, SN ; Song, ZT ; Ren, WC ; Xiong, YL ; Rao, F ; Wu, LC ; Cheng, Y ; Liu, B |
刊名 | SCRIPTA MATERIALIA |
出版日期 | 2012 |
卷号 | 66期号:9页码:702-705 |
ISSN号 | 1359-6462 |
关键词 | Phase change memory Multilayers Electric resistivity Simulation |
通讯作者 | Lu, YG (reprint author), Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. |
中文摘要 | The crystallization temperature of superlattice-like GaSb/Sb2Te3 films can be easily changed by the number of interfaces and thickness ratio between GaSb and Sb2Te3 layers. The reset operation can be completed by an electric pulse as short as 20 ns for th |
学科主题 | Science & Technology - Other Topics; Materials Science; Metallurgy & Metallurgical Engineering |
收录类别 | 2012SCI-134 |
原文出处 | 10.1016/j.scriptamat.2012.01.013 |
语种 | 英语 |
公开日期 | 2013-04-17 |
源URL | [http://ir.sim.ac.cn/handle/331004/114833] |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Lu, YG,Song, SN,Song, ZT,et al. Superlattice-like GaSb/Sb2Te3 films for low-power phase change memory[J]. SCRIPTA MATERIALIA,2012,66(9):702-705. |
APA | Lu, YG.,Song, SN.,Song, ZT.,Ren, WC.,Xiong, YL.,...&Liu, B.(2012).Superlattice-like GaSb/Sb2Te3 films for low-power phase change memory.SCRIPTA MATERIALIA,66(9),702-705. |
MLA | Lu, YG,et al."Superlattice-like GaSb/Sb2Te3 films for low-power phase change memory".SCRIPTA MATERIALIA 66.9(2012):702-705. |
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