Temperature Dependence of Hysteresis Effect in Partially Depleted Silicon-on-Insulator MOSFETs
文献类型：期刊论文
| 作者 | Luo, JX ; Chen, J ; Zhou, JH ; Wu, QQ ; Chai, Z ; Wang, X |
| 刊名 | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
 |
| 出版日期 | 2012 |
| 卷号 | 12期号:1页码:63-67 |
| 关键词 | Hysteresis MOSFET partially depleted (PD) silicon-on-insulator (SOI) SOI technology temperature |
| ISSN号 | 1530-4388 |
| 通讯作者 | Luo, JX (reprint author), Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. |
| 中文摘要 | The hysteresis effect on the output characteristics, which originates from the floating-body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, at different temperatures between 25 degrees C and 125 degrees C. For a b |
| 学科主题 | Engineering; Physics |
| 收录类别 | 2012SCI-177 |
| 原文出处 | 10.1109/TDMR.2011.2165282 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114841]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Luo, JX,Chen, J,Zhou, JH,et al. Temperature Dependence of Hysteresis Effect in Partially Depleted Silicon-on-Insulator MOSFETs[J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY,2012,12(1):63-67. |
| APA | Luo, JX,Chen, J,Zhou, JH,Wu, QQ,Chai, Z,&Wang, X.(2012).Temperature Dependence of Hysteresis Effect in Partially Depleted Silicon-on-Insulator MOSFETs.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY,12(1),63-67. |
| MLA | Luo, JX,et al."Temperature Dependence of Hysteresis Effect in Partially Depleted Silicon-on-Insulator MOSFETs".IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 12.1(2012):63-67. |
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