The chemistry and thermal stability of HfTaO/Si interface by x-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Yu, T ; Jin, CG ; Yang, XM ; Wu, XM ; Zhuge, LJ ; Ge, SB |
| 刊名 | SURFACE AND INTERFACE ANALYSIS
 |
| 出版日期 | 2012 |
| 卷号 | 44期号:4页码:395-398 |
| 关键词 | high-k dielectric thin film HfTaO x-ray photoelectron spectroscopy interfacial chemistry thermal property |
| ISSN号 | 0142-2421 |
| 通讯作者 | Wu, XM (reprint author), Soochow Univ, Dept Phys, Suzhou 215006, Peoples R China. |
| 中文摘要 | The chemistry and thermal stability of HfTaO/Si interface as a function of annealing temperature have been investigated by x-ray photoelectron spectroscopy. For the as-deposited sample, the formation of Hf-silicate bond is observed on Hf 4f core-level spe |
| 学科主题 | Chemistry |
| 收录类别 | 2012SCI-149 |
| 原文出处 | 10.1002/sia.3815 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114843]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yu, T,Jin, CG,Yang, XM,et al. The chemistry and thermal stability of HfTaO/Si interface by x-ray photoelectron spectroscopy[J]. SURFACE AND INTERFACE ANALYSIS,2012,44(4):395-398. |
| APA | Yu, T,Jin, CG,Yang, XM,Wu, XM,Zhuge, LJ,&Ge, SB.(2012).The chemistry and thermal stability of HfTaO/Si interface by x-ray photoelectron spectroscopy.SURFACE AND INTERFACE ANALYSIS,44(4),395-398. |
| MLA | Yu, T,et al."The chemistry and thermal stability of HfTaO/Si interface by x-ray photoelectron spectroscopy".SURFACE AND INTERFACE ANALYSIS 44.4(2012):395-398. |
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