The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition
文献类型：期刊论文
| 作者 | Wang, H ; Li, SL ; Xiong, H ; Wu, ZH ; Dai, JN ; Tian, Y ; Fang, YY ; Chen, CQ |
| 刊名 | JOURNAL OF ELECTRONIC MATERIALS
 |
| 出版日期 | 2012 |
| 卷号 | 41期号:3页码:466-470 |
| 关键词 | Aluminum nitride nucleation pulsed atomic layer epitaxy metalorganic chemical vapor deposition |
| ISSN号 | 0361-5235 |
| 通讯作者 | Wang, H (reprint author), Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Sch Optoelect Sci & Engn, Wuhan 430074, Peoples R China. |
| 中文摘要 | AlN epilayers were grown directly on sapphire (0001) substrates using a combined growth scheme, consisting of a low-temperature nucleation layer and a second layer grown by high-temperature pulsed atomic layer epitaxy via metalorganic chemical vapor depos |
| 学科主题 | Engineering; Materials Science; Physics |
| 收录类别 | 2012SCI-184 |
| 原文出处 | 10.1007/s11664-011-1798-3 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114844]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, H,Li, SL,Xiong, H,et al. The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition[J]. JOURNAL OF ELECTRONIC MATERIALS,2012,41(3):466-470. |
| APA | Wang, H.,Li, SL.,Xiong, H.,Wu, ZH.,Dai, JN.,...&Chen, CQ.(2012).The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition.JOURNAL OF ELECTRONIC MATERIALS,41(3),466-470. |
| MLA | Wang, H,et al."The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition".JOURNAL OF ELECTRONIC MATERIALS 41.3(2012):466-470. |
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