The influence of channel length on total ionizing dose effect in deep submicron technologies
文献类型：期刊论文
| 作者 | Hu, ZY ; Liu, ZL ; Shao, H ; Zhang, ZX ; Ning, BX ; Bi, DW ; Chen, M ; Zou, SC |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2012 |
| 卷号 | 61期号:5页码:50702 |
| 关键词 | total ionizing dose shallow trench isolation oxide trapped charge metal-oxide-semiconductor field effect transistor |
| ISSN号 | 1000-3290 |
| 通讯作者 | Hu, ZY (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. |
| 中文摘要 | The influence of channel length on total ionizing dose effect in a 180 nm complementary metal-oxide semiconductor technology is studied. When other conditions such as radiation bias, device structure are the same, the overall radiation response is determi |
| 学科主题 | Physics |
| 收录类别 | 2012SCI-165 |
| 语种 | 中文 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114846]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Hu, ZY,Liu, ZL,Shao, H,et al. The influence of channel length on total ionizing dose effect in deep submicron technologies[J]. ACTA PHYSICA SINICA,2012,61(5):50702. |
| APA | Hu, ZY.,Liu, ZL.,Shao, H.,Zhang, ZX.,Ning, BX.,...&Zou, SC.(2012).The influence of channel length on total ionizing dose effect in deep submicron technologies.ACTA PHYSICA SINICA,61(5),50702. |
| MLA | Hu, ZY,et al."The influence of channel length on total ionizing dose effect in deep submicron technologies".ACTA PHYSICA SINICA 61.5(2012):50702. |
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