The optical property of tensile-strained n-type doped Ge
文献类型：期刊论文
| 作者 | Huang, SH ; Li, C ; Chen, CZ ; Yuan-Yu, Z ; Lai, HK ; Chen, SY |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2012 |
| 卷号 | 61期号:3页码:36202 |
| 关键词 | strain n-type doped germanium internal quantum efficiency optical gain |
| ISSN号 | 1000-3290 |
| 通讯作者 | Huang, SH (reprint author), Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China. |
| 中文摘要 | Tensile-strained germanium is one of the promsing materials for Si-based photonic devices due to its quasi-direct band and compatiblility with silicon technology. The band structure of tensile-strained germanium is investigated based on the theory of van |
| 学科主题 | Physics |
| 收录类别 | 2012SCI-198 |
| 语种 | 中文 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114848]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Huang, SH,Li, C,Chen, CZ,et al. The optical property of tensile-strained n-type doped Ge[J]. ACTA PHYSICA SINICA,2012,61(3):36202. |
| APA | Huang, SH,Li, C,Chen, CZ,Yuan-Yu, Z,Lai, HK,&Chen, SY.(2012).The optical property of tensile-strained n-type doped Ge.ACTA PHYSICA SINICA,61(3),36202. |
| MLA | Huang, SH,et al."The optical property of tensile-strained n-type doped Ge".ACTA PHYSICA SINICA 61.3(2012):36202. |
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