The structure and electrical properties of HfTaON high-k films prepared by DIBSD
文献类型：期刊论文
| 作者 | Yu, T ; Jin, CG ; Yang, XM ; Dong, YJ ; Zhang, HY ; Zhuge, LJ ; Wu, XM ; Wu, ZF |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2012 |
| 卷号 | 258期号:7页码:2953-2958 |
| 关键词 | HfTaON XPS TEM FTIR Crystallization temperature Electrical characteristic |
| ISSN号 | 0169-4332 |
| 通讯作者 | Zhuge, LJ (reprint author), Soochow Univ, Key Lab Thin Films Jiangsu, Suzhou 215006, Peoples R China. |
| 中文摘要 | We have investigated the microstructure and electrical properties of HfTaON high-k films deposited on n-type Si (100) substrate using a dual ion beam sputtering deposition technique (DIBSD). It is worth noting that HfO2 begin to precipitate from four-comp |
| 学科主题 | Chemistry; Materials Science; Physics |
| 收录类别 | 2012SCI-217 |
| 原文出处 | 10.1016/j.apsusc.2011.11.015 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114850]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yu, T,Jin, CG,Yang, XM,et al. The structure and electrical properties of HfTaON high-k films prepared by DIBSD[J]. APPLIED SURFACE SCIENCE,2012,258(7):2953-2958. |
| APA | Yu, T.,Jin, CG.,Yang, XM.,Dong, YJ.,Zhang, HY.,...&Wu, ZF.(2012).The structure and electrical properties of HfTaON high-k films prepared by DIBSD.APPLIED SURFACE SCIENCE,258(7),2953-2958. |
| MLA | Yu, T,et al."The structure and electrical properties of HfTaON high-k films prepared by DIBSD".APPLIED SURFACE SCIENCE 258.7(2012):2953-2958. |
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