Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed
文献类型：期刊论文
| 作者 | Zhu, M ; Wu, LC ; Song, ZT ; Rao, F ; Cai, DL ; Peng, C ; Zhou, XL ; Ren, K ; Song, SN ; Liu, B ; Feng, SL |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 100期号:12页码:122101 |
| 关键词 | antimony alloys crystallisation metallic thin films phase change materials phase change memories tellurium alloys titanium alloys |
| ISSN号 | 0003-6951 |
| 通讯作者 | Wu, LC (reprint author), Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China. |
| 中文摘要 | With a high crystallization temperature of 211 degrees C, Ti10Sb60Te30 phase change material exhibits a data retention of 10-yr at 137 degrees C, which is much better than that of usual Ge2Sb2Te5. No other phase is formed in Ti10Sb60Te30 film except hexag |
| 学科主题 | Physics |
| 收录类别 | 2012SCI-159 |
| 原文出处 | 10.1063/1.3695036 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114855]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhu, M,Wu, LC,Song, ZT,et al. Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed[J]. APPLIED PHYSICS LETTERS,2012,100(12):122101. |
| APA | Zhu, M.,Wu, LC.,Song, ZT.,Rao, F.,Cai, DL.,...&Feng, SL.(2012).Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed.APPLIED PHYSICS LETTERS,100(12),122101. |
| MLA | Zhu, M,et al."Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed".APPLIED PHYSICS LETTERS 100.12(2012):122101. |
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