Transportation of carriers in silicon implanted SiO2 films during ionizing radiation
文献类型：期刊论文
| 作者 | Chen, M ; Zhang, ZX ; Wei, X ; Bi, DW ; Zou, SC ; Wang, X |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2012 |
| 卷号 | 272页码:266-270 |
| 关键词 | Silicon dioxide Ion implantation Total ionizing dose Carrier transportation |
| ISSN号 | 0168-583X |
| 通讯作者 | Chen, M (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 20005, Peoples R China. |
| 中文摘要 | Silicon ion implantation has been proved to be an effective method for total-dose hardening of SiO2 in MOS devices such as buried oxides in SOI devices, while the mechanisms are still in discussion. In this work, behavior of 10 key X-ray induced carriers |
| 学科主题 | Instruments & Instrumentation; Nuclear Science & Technology; Physics |
| 收录类别 | 2012SCI-197 |
| 原文出处 | 10.1016/j.nimb.2011.01.080 |
| 语种 | 英语 |
| 公开日期 | 2013-04-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/114857]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, M,Zhang, ZX,Wei, X,et al. Transportation of carriers in silicon implanted SiO2 films during ionizing radiation[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2012,272:266-270. |
| APA | Chen, M,Zhang, ZX,Wei, X,Bi, DW,Zou, SC,&Wang, X.(2012).Transportation of carriers in silicon implanted SiO2 films during ionizing radiation.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,272,266-270. |
| MLA | Chen, M,et al."Transportation of carriers in silicon implanted SiO2 films during ionizing radiation".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 272(2012):266-270. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。