中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Model-Based Prediction of the Plasma Oscillation Excitation Response Characteristics of a High-Electron Mobility Transistor-Based Terahertz Photomixer with the Cap Region

文献类型:期刊论文

作者Chen, Y ; He, J ; Liang, HL ; Ma, Y ; Chen, Q ; Su, YM ; He, HY ; Chan, MS ; Cao, JC
刊名JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE
出版日期2012
卷号9期号:4页码:549-554
关键词Terahertz Photomixer HEMT Analytical Model Plasma Excitation Two Dimensional Gas (2DEG)
ISSN号1546-1955
通讯作者He, J (reprint author), Peking Univ, Sch Elect Engn & Comp Sci, Beijing 100871, Peoples R China.
中文摘要The model-based prediction of the response characteristics of a terahertz photomixer from the excitation of plasma oscillation in the channel of a high-electron mobility transistor (HEMT) with the cap region is presented in this paper. In the proposed mod
学科主题Chemistry; Science & Technology - Other Topics; Materials Science; Physics
原文出处10.1166/jctn.2012.2059
公开日期2013-04-22
源URL[http://ir.sim.ac.cn/handle/331004/114874]  
专题上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文
推荐引用方式
GB/T 7714
Chen, Y,He, J,Liang, HL,et al. Model-Based Prediction of the Plasma Oscillation Excitation Response Characteristics of a High-Electron Mobility Transistor-Based Terahertz Photomixer with the Cap Region[J]. JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE,2012,9(4):549-554.
APA Chen, Y.,He, J.,Liang, HL.,Ma, Y.,Chen, Q.,...&Cao, JC.(2012).Model-Based Prediction of the Plasma Oscillation Excitation Response Characteristics of a High-Electron Mobility Transistor-Based Terahertz Photomixer with the Cap Region.JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE,9(4),549-554.
MLA Chen, Y,et al."Model-Based Prediction of the Plasma Oscillation Excitation Response Characteristics of a High-Electron Mobility Transistor-Based Terahertz Photomixer with the Cap Region".JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE 9.4(2012):549-554.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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