中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Active roles of helium in the growth of hydrogenated microcrystalline silicon germanium thin films

文献类型:期刊论文

作者Zhang, LP ; Zhang, JJ ; Zhang, X ; Cao, Y ; Zhao, Y
刊名THIN SOLID FILMS
出版日期2012
卷号520期号:18页码:5940-5945
关键词Helium dilution mu c-SiGe:H Atomic H Excitation transfer effect Optical emission spectroscopy
ISSN号0040-6090
通讯作者Zhang, JJ (reprint author), Nankai Univ, Inst Photoelect Thin Film Devices & Tech, 94 Weijin Rd, Tianjin 300071, Peoples R China.
中文摘要A combination of hydrogen and helium dilutions was introduced when the microcrystalline silicon germanium (mu c-SiGe:H) thin films were prepared by very high frequency plasma enhanced chemical vapor deposition on a low-temperature substrate. An optimum he
学科主题Materials Science; Physics
收录类别2012SCI-095
原文出处10.1016/j.tsf.2012.05.017
语种英语
公开日期2013-04-24
源URL[http://ir.sim.ac.cn/handle/331004/114952]  
专题上海微系统与信息技术研究所_新能源技术_期刊论文
推荐引用方式
GB/T 7714
Zhang, LP,Zhang, JJ,Zhang, X,et al. Active roles of helium in the growth of hydrogenated microcrystalline silicon germanium thin films[J]. THIN SOLID FILMS,2012,520(18):5940-5945.
APA Zhang, LP,Zhang, JJ,Zhang, X,Cao, Y,&Zhao, Y.(2012).Active roles of helium in the growth of hydrogenated microcrystalline silicon germanium thin films.THIN SOLID FILMS,520(18),5940-5945.
MLA Zhang, LP,et al."Active roles of helium in the growth of hydrogenated microcrystalline silicon germanium thin films".THIN SOLID FILMS 520.18(2012):5940-5945.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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