Growth temperature dependences of InN films grown by MOCVD
文献类型：期刊论文
| 作者 | Yang, CB ; Wang, XL ; Xiao, HL ; Zhang, XB ; Hua, GX ; Ran, JX ; Wang, CM ; Li, JP ; Li, JM ; Wang, ZG |
| 刊名 | applied surface science
 |
| 出版日期 | 2008 |
| 卷号 | 255期号:5页码:3149-3152 part 2 |
| 关键词 | InN MOCVD Mobility |
| ISSN号 | 0169-4332 |
| 通讯作者 | yang, cb, chinese acad sci, inst semicond, novel mat lab, jia 35,qinghua dong rd,pob 912, beijing 100083, peoples r china. 电子邮箱地址: cbyang@semi.ac.cn |
| 中文摘要 | we investigate the growth temperature dependences of inn films grown by metal organic chemical vapor deposition (mocvd). experimental results indicate that growth temperature has a strong effect on the surface morphology, crystalline quality and electrical properties of the inn layer. the increasing growth temperature broadened the v scan's full-width at half-maximum (fwhm) and roughened the surface morphology; whereas the electrical properties improved: as the temperature increased from 460 degrees c to 560 degrees c, room-temperature hall mobility increased from 98 cm(2)/v s to nearly 800 cm(2)/v s and carrier concentration dropped from 5.29 x 10(19) cm (3) to 0.93 x 10(19) cm (3). the higher growth temperature resulted in more efficient cracking of nh3, which improved hall mobility and decreased carrier concentration. (c) 2008 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体化学 |
| 收录类别 | SCI |
| 资助信息 | knowledge innovation engineering of chinese academy of sciences yyyj-070102 national nature sciences foundation of china 60576046 60606002state key development program for basic research of china 2006cb604905 513270605this work was supported by the knowledge innovation engineering of chinese academy of sciences (no. yyyj-070102); the national nature sciences foundation of china (no. 60576046, 60606002); and the state key development program for basic research of china (nos. 2006cb604905 and 513270605). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6330]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang, CB,Wang, XL,Xiao, HL,et al. Growth temperature dependences of InN films grown by MOCVD[J]. applied surface science,2008,255(5):3149-3152 part 2. |
| APA | Yang, CB.,Wang, XL.,Xiao, HL.,Zhang, XB.,Hua, GX.,...&Wang, ZG.(2008).Growth temperature dependences of InN films grown by MOCVD.applied surface science,255(5),3149-3152 part 2. |
| MLA | Yang, CB,et al."Growth temperature dependences of InN films grown by MOCVD".applied surface science 255.5(2008):3149-3152 part 2. |
入库方式： OAI收割
来源：半导体研究所
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