Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition
文献类型：期刊论文
| 作者 | Liang S ; Pan JQ
|
| 刊名 | chinese physics b
 |
| 出版日期 | 2008 |
| 卷号 | 17期号:11页码:4300-4304 |
| 关键词 | metal-organic chemical vapour deposition |
| ISSN号 | 1674-1056 |
| 通讯作者 | liang, s, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: liangsong@red.semi.ac.cn |
| 中文摘要 | photoluminescence (pl) and lasing properties of inas/gaas quantum dots (qds) with direrent growth procedures prepared by metalorganic chemical vapour deposition are studied. pl measurements show that the low growth rate qd sample has a larger pl intensity and a narrower pl line width than the high growth rate sample. during rapid thermal annealing, however, the lowgrowth rate sample shows a greater blue shift of pl peak wave length. this is caused by the larger inas layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the qds in the low-growth-rate sample. a growth technique including growth interruption and in-situ annealing, named indium flush method, is used during the growth of gaas cap layer, which can flatten the gaas surface effectively. though the method results in a blue shift of pl peak wavelength and a broadening of pl line width, it is essential for the fabrication of room temperature working qd lasers. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 60706009 90401025607360366077702160476009national key basic research program of china 2006cb604901 2006cb604902 national high technology research and development program of china 2006aa01z256 2007aa03z419 2007aa03z417 project supported by the national natural science foundation of china (grant nos 60706009, 90401025, 60736036, 60777021 and 60476009), the national key basic research program of china (grant nos 2006cb604901 and 2006cb604902) and the national high technology research and development program of china (grant nos 2006aa01z256, 2007aa03z419 and 2007aa03z417). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6342]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liang S,Pan JQ. Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition[J]. chinese physics b,2008,17(11):4300-4304. |
| APA | Liang S,&Pan JQ.(2008).Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition.chinese physics b,17(11),4300-4304. |
| MLA | Liang S,et al."Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition".chinese physics b 17.11(2008):4300-4304. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。