Dislocation scattering in AlxGa1-xN/GaN heterostructures
文献类型：期刊论文
| 作者 | Xu, XQ ; Liu, XL ; Han, XX ; Yuan, HR ; Wang, J ; Guo, Y ; Song, HP ; Zheng, GL ; Wei, HY ; Yang, SY ; Zhu, QS ; Wang, ZG |
| 刊名 | applied physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 93期号:18页码:art. no. 182111 |
| 关键词 | aluminium compounds dislocation density electron mobility gallium compounds III-V semiconductors interface roughness semiconductor heterojunctions two-dimensional electron gas wide band gap semiconductors |
| ISSN号 | 0003-6951 |
| 通讯作者 | xu, xq, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: xlliu@red.semi.ac.cn ; qszhu@semi.ac.cn |
| 中文摘要 | the theoretical electron mobility limited by dislocation scattering of a two-dimensional electron gas confined near the interface of alxga1-xn/gan heterostructures was calculated. based on the model of treating dislocation as a charged line, an exponentially varied potential was adopted to calculate the mobility. the estimated mobility suggests that such a choice can simplify the calculation without introducing significant deviation from experimental data, and we obtained a good fitting between the calculated and experimental results. it was found that the measured mobility is dominated by interface roughness and dislocation scattering at low temperatures if dislocation density is relatively high (>10(9) cm(-2)), and accounts for the nearly flattening-out behavior with increasing temperature. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national science foundation of china 60506002 60776015special funds for major state basic research project (973 program) of china 2006cb604907 863 high technology r& d program of china 2007aa03z402 2007aa03z451 this work was supported by the national science foundation of china (nos. 60506002 and 60776015), the special funds for major state basic research project (973 program) of china (no. 2006cb604907), and the 863 high technology r& d program of china (nos. 2007aa03z402 and 2007aa03z451) |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6346]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu, XQ,Liu, XL,Han, XX,et al. Dislocation scattering in AlxGa1-xN/GaN heterostructures[J]. applied physics letters,2008,93(18):art. no. 182111. |
| APA | Xu, XQ.,Liu, XL.,Han, XX.,Yuan, HR.,Wang, J.,...&Wang, ZG.(2008).Dislocation scattering in AlxGa1-xN/GaN heterostructures.applied physics letters,93(18),art. no. 182111. |
| MLA | Xu, XQ,et al."Dislocation scattering in AlxGa1-xN/GaN heterostructures".applied physics letters 93.18(2008):art. no. 182111. |
入库方式： OAI收割
来源：半导体研究所
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