High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns
文献类型：期刊论文
| 作者 | Peng, JY ; Tan, HM ; Wang, YG ; Ma, XY ; Miao, JG ; Wang, BS ; Qian, LS |
| 刊名 | optik
 |
| 出版日期 | 2008 |
| 卷号 | 119期号:14页码:657-660 |
| 关键词 | Microchip laser Q-switched High repetition rate Lt In0.25Ga0.75As GaAs |
| ISSN号 | 0030-4026 |
| 通讯作者 | wang, yg, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: chinawygxjw@163.com |
| 中文摘要 | we have demonstrated a compact and an efficient passively q-switched microchip nd:yvo4 laser by using a composite semiconductor absorber as well as an output coupler. the composite semiconductor absorber was composed of an lt (low-temperature grown) in0.25ga0.75as absorber and a pure gaas absorber. to our knowledge, it was the first demonstration of the special absorber for q-switching operation of microchip lasers. laser pulses with durations of 1.1 ns were generated with a 350 mu m thick laser crystal and the repetition rate of the pulses was as high as 4.6 mhz. the average output power was 120 mw at the pump power of 700 mw. pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm, thick laser crystal and a 1 mm thick laser crystal, respectively. (c) 2007 elsevier gmbh. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6360]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Peng, JY,Tan, HM,Wang, YG,et al. High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns[J]. optik,2008,119(14):657-660. |
| APA | Peng, JY.,Tan, HM.,Wang, YG.,Ma, XY.,Miao, JG.,...&Qian, LS.(2008).High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns.optik,119(14),657-660. |
| MLA | Peng, JY,et al."High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns".optik 119.14(2008):657-660. |
入库方式： OAI收割
来源：半导体研究所
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