中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN

文献类型:期刊论文

作者Hao, GD ; Chen, YH
刊名chinese physics letters
出版日期2008
卷号25期号:11页码:4139-4142
关键词QUANTUM-WELL LASERS DIODES SAPPHIRE
ISSN号0256-307x
通讯作者hao, gd, chinese acad sci, inst semicond, key lab semicond mat sci, box 912, beijing 100083, peoples r china. 电子邮箱地址: gdhao@semi.ac.cn ; yhchen@semi.ac.cn
中文摘要we investigate the uniaxial strain effect in the c-plane on optical properties of wurtzite gan based on k center dot p theory, the spin-orbit interactions are also taken into account. the energy dispersions show that the uniaxial strain in the c-plane gives an anisotropic energy splitting in the k(x) - k(y) plane, which can reduce the density of states. the uniaxial strain also results in giant in-plane optical polarization anisotropy, hence causes the threshold carrier density reduced. we clarify the relations between the uniaxial strain and the optical polarization properties. as a result, it is suggested that the compressive uniaxial strain perpendicular to the laser cavity direction in the c-plane is one of the preferable approaches for the effcient improvement of gan-based laser performance.
学科主题半导体物理
收录类别SCI
资助信息national basic research programme of china 2006cb604908 2006cb921607 national natural science foundation of china 60625402 supported by the national basic research programme of china under grant nos 2006cb604908 and 2006cb921607, and the national natural science foundation of china under grant no 60625402.
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/6370]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Hao, GD,Chen, YH. Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN[J]. chinese physics letters,2008,25(11):4139-4142.
APA Hao, GD,&Chen, YH.(2008).Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN.chinese physics letters,25(11),4139-4142.
MLA Hao, GD,et al."Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN".chinese physics letters 25.11(2008):4139-4142.

入库方式: OAI收割

来源:半导体研究所

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