Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN
文献类型:期刊论文
作者 | Hao, GD ; Chen, YH |
刊名 | chinese physics letters
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出版日期 | 2008 |
卷号 | 25期号:11页码:4139-4142 |
关键词 | QUANTUM-WELL LASERS DIODES SAPPHIRE |
ISSN号 | 0256-307x |
通讯作者 | hao, gd, chinese acad sci, inst semicond, key lab semicond mat sci, box 912, beijing 100083, peoples r china. 电子邮箱地址: gdhao@semi.ac.cn ; yhchen@semi.ac.cn |
中文摘要 | we investigate the uniaxial strain effect in the c-plane on optical properties of wurtzite gan based on k center dot p theory, the spin-orbit interactions are also taken into account. the energy dispersions show that the uniaxial strain in the c-plane gives an anisotropic energy splitting in the k(x) - k(y) plane, which can reduce the density of states. the uniaxial strain also results in giant in-plane optical polarization anisotropy, hence causes the threshold carrier density reduced. we clarify the relations between the uniaxial strain and the optical polarization properties. as a result, it is suggested that the compressive uniaxial strain perpendicular to the laser cavity direction in the c-plane is one of the preferable approaches for the effcient improvement of gan-based laser performance. |
学科主题 | 半导体物理 |
收录类别 | SCI |
资助信息 | national basic research programme of china 2006cb604908 2006cb921607 national natural science foundation of china 60625402 supported by the national basic research programme of china under grant nos 2006cb604908 and 2006cb921607, and the national natural science foundation of china under grant no 60625402. |
语种 | 英语 |
公开日期 | 2010-03-08 |
源URL | [http://ir.semi.ac.cn/handle/172111/6370] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Hao, GD,Chen, YH. Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN[J]. chinese physics letters,2008,25(11):4139-4142. |
APA | Hao, GD,&Chen, YH.(2008).Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN.chinese physics letters,25(11),4139-4142. |
MLA | Hao, GD,et al."Uniaxial Strain Effects on Optical Properties of c-plane Wurtzite GaN".chinese physics letters 25.11(2008):4139-4142. |
入库方式: OAI收割
来源:半导体研究所
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