Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells
文献类型：期刊论文
| 作者 | Zhao, DG ; Jiang, DS ; Zhu, JJ ; Liu, ZS ; Zhang, SM ; Wang, YT ; Yang, H |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:11页码:4143-4146 |
| 关键词 | X-RAY-DIFFRACTION EPITAXIAL GAN DEPENDENCE PHOTOLUMINESCENCE GROWTH FILMS |
| ISSN号 | 0256-307x |
| 通讯作者 | zhao, dg, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: dgzhao@red.semi.ac.cn |
| 中文摘要 | effects of interface roughness and dislocation density on the electroluminescence (el) intensity of ingan multiple quantum wells (mqws) are investigated. it is found that the el intensity increases with the number of satellite peaks in the x-ray diffraction experiments of ingan mqw samples. it is indicated that the rough interface will lead the reduction of el intensity of ingan mqw samples. it is also found that the el intensity increases with the decrease of dislocation density which is characterized by the x-ray diffraction measurements. it is suggested that the el intensity of ingan mqws can be improved by decreasing the interface roughness and dislocation density. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 60776047 60506001604760216057600360836003national basic research programme of china 2007cb936700 national high technology research and development programme of china 2007aa03z401 supported by the national natural science foundation of china under grant nos 60776047, 60506001, 60476021, 60576003 and 60836003, the national basic research programme of china under grant no 2007cb936700, and the national high technology research and development programme of china under grant no 2007aa03z401. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6372]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao, DG,Jiang, DS,Zhu, JJ,et al. Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells[J]. chinese physics letters,2008,25(11):4143-4146. |
| APA | Zhao, DG.,Jiang, DS.,Zhu, JJ.,Liu, ZS.,Zhang, SM.,...&Yang, H.(2008).Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells.chinese physics letters,25(11),4143-4146. |
| MLA | Zhao, DG,et al."Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells".chinese physics letters 25.11(2008):4143-4146. |
入库方式： OAI收割
来源：半导体研究所
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