Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms
文献类型：期刊论文
| 作者 | Yang, JL ; Gaspar, J ; Paul, O |
| 刊名 | journal of microelectromechanical systems
 |
| 出版日期 | 2008 |
| 卷号 | 17期号:5页码:1120-1134 |
| 关键词 | Bulge test fracture pooled Weibull analysis silicon nitride (Si3N4) silicon oxide (SiO2) |
| ISSN号 | 1057-7157 |
| 通讯作者 | yang, jl, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: paul@imtek.de |
| 中文摘要 | the bulge test is successfully extended to the determination of the fracture properties of silicon nitride and oxide thin films. this is achieved by using long diaphragms made of silicon nitride single layers and oxide/nitride bilayers, and applying comprehensive mechanical model that describes the mechanical response of the diaphragms under uniform differential pressure. the model is valid for thin films with arbitrary z-dependent plane-strain modulus and prestress, where z denotes the coordinate perpendicular to the diaphragm. it takes into account the bending rigidity and stretching stiffness of the layered materials and the compliance of the supporting edges. this enables the accurate computation of the load-deflection response and stress distribution throughout the composite diaphragm as a function of the load, in particular at the critical pressure leading to the fracture of the diaphragms. the method is applied to diaphragms made of single layers of 300-nm-thick silicon nitride deposited by low-pressure chemical vapor deposition and composite diaphragms of silicon nitride grown on top of thermal silicon oxide films produced by wet thermal oxidation at 950 degrees c and 1050 degrees c with target thicknesses of 500, 750, and 1000 mn. all films characterized have an amorphous structure. plane-strain moduli e-ps and prestress levels sigma(0) of 304.8 +/- 12.2 gpa and 1132.3 +/- 34.4 mpa, respectively, are extracted for si3n4, whereas e-ps = 49.1 +/- 7.4 gpa and sigma(0) = -258.6 +/- 23.1 mpa are obtained for sio2 films. the fracture data are analyzed using the standardized form of the weibull distribution. the si3n4 films present relatively high values of maximum stress at fracture and weibull moduli, i.e., sigma(max) = 7.89 +/- 0.23 gpa and m = 50.0 +/- 3.6, respectively, when compared to the thermal oxides (sigma(max) = 0.89 +/- 0.07 gpa and m = 12.1 +/- 0.5 for 507-nm-thick 950 degrees c layers). a marginal decrease of sigma(max) with thickness is observed for sio2, with no significant differences between the films grown at 950 degrees c and 1050 degrees c. weibull moduli of oxide thin films are found to lie between 4.5 +/- 1.2 and 19.8 +/- 4.2, depending on the oxidation temperature and film thickness. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | german science foundation (dfg) pa 792/1-2 this work was supported by the german science foundation (dfg) under contract pa 792/1-2. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6382]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang, JL,Gaspar, J,Paul, O. Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms[J]. journal of microelectromechanical systems,2008,17(5):1120-1134. |
| APA | Yang, JL,Gaspar, J,&Paul, O.(2008).Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms.journal of microelectromechanical systems,17(5),1120-1134. |
| MLA | Yang, JL,et al."Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms".journal of microelectromechanical systems 17.5(2008):1120-1134. |
入库方式： OAI收割
来源：半导体研究所
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