中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effects of the morphology of ZnO/Ag interface on the surface-plasmon-enhanced emission of ZnO films

文献类型:期刊论文

作者You JB; Zhang XW; Fan YM; Yin ZG
刊名journal of physics d-applied physics
出版日期2008
卷号41期号:20页码:art. no. 205101
关键词LIGHT-EMITTING-DIODES
ISSN号0022-3727
通讯作者zhang, xw, cas, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: xwzhang@semi.ac.cn
中文摘要the effects of the surface morphology of ag on the surface-plasmon-enhanced emission of zno films have been studied for a zno/ag/si system by photoluminescence spectroscopy and atomic force microscopy. the results indicate that the enhancement of zno ultraviolet emission is dependent on the deposition conditions of the ag interlayers. by examining the dependence of the enhancement ratio of surface-plasmon-mediated emission on the characteristic parameters of ag surface morphology, we found that the surface plasmon coupling to light is determined by both the ag particle size and density.
学科主题半导体物理
收录类别SCI
资助信息hundred talents program chinese academy of sciences 2006aa03z306 national natural science foundation of china 50601025 this work was supported by the hundred talents program chinese academy of sciences, the '863' project of china (2006aa03z306) and the national natural science foundation of china (50601025).
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/6386]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
You JB,Zhang XW,Fan YM,et al. Effects of the morphology of ZnO/Ag interface on the surface-plasmon-enhanced emission of ZnO films[J]. journal of physics d-applied physics,2008,41(20):art. no. 205101.
APA You JB,Zhang XW,Fan YM,&Yin ZG.(2008).Effects of the morphology of ZnO/Ag interface on the surface-plasmon-enhanced emission of ZnO films.journal of physics d-applied physics,41(20),art. no. 205101.
MLA You JB,et al."Effects of the morphology of ZnO/Ag interface on the surface-plasmon-enhanced emission of ZnO films".journal of physics d-applied physics 41.20(2008):art. no. 205101.

入库方式: OAI收割

来源:半导体研究所

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