Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy
文献类型：期刊论文
| 作者 | Wei, TB ; Duan, RF ; Wang, JX ; Li, JM ; Huo, ZQ ; Yang, JK ; Zeng, YP |
| 刊名 | japanese journal of applied physics
 |
| 出版日期 | 2008 |
| 卷号 | 47期号:5页码:3346-3349 part 1 |
| ISSN号 | 0021-4922 |
| 关键词 | HVPE GaN sapphire nonpolar semipolar |
| 通讯作者 | wei, tb, chinese acad sci, inst semicond, res & dev ctr semicond lighting technol, beijing 100083, peoples r china. 电子邮箱地址: tbwei@semi.ac.cn |
| 中文摘要 | thick nonpolar (10 (1) over bar0) gan layers were grown on m-plane sapphire substrates by hydride vapor phase epitaxy (hvpe) using magnetron sputtered zno buffers, while semipolar (10 (1) over bar(3) over bar) gan layers were obtained by the conventional two-step growth method using the same substrate. the in-plane anisotropic structural characteristics and stress distribution of the epilayers were revealed by high. resolution x-ray diffraction and polarized raman scattering measurements. atomic force microscopy (afm) images revealed that the striated surface morphologies correlated with the basal plane stacking faults for both (10 (1) over bar0) and (10 (1) over bar(3) over bar) gan films. the m-plane gan surface showed many triangular-shaped pits aligning uniformly with the tips pointing to the c-axis after etching in boiled koh, whereas the oblique hillocks appeared on the semipolar epilayers. in addition, the dominant emission at 3.42ev in m-plane gan films displayed a red shift with respect to that in semipolar epilayers, maybe owing to the different strain states present in the two epitaxial layers. [doi: 10.1143/jjap.47.3346] |
| 学科主题 | 半导体物理 |
| 资助信息 | national high technology program of china 2006aa03a111 2006aa03a143 this work is supported by the national high technology program of china under grant nos. 2006aa03a111 and 2006aa03a143. we would also like to thank professors hong chen and yulong liu of the institute of physics, chinese academy of sciences, for their assistance in the dcxrd test and raman analysis, respectively. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6398]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wei, TB,Duan, RF,Wang, JX,et al. Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy[J]. japanese journal of applied physics,2008,47(5):3346-3349 part 1. |
| APA | Wei, TB.,Duan, RF.,Wang, JX.,Li, JM.,Huo, ZQ.,...&Zeng, YP.(2008).Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy.japanese journal of applied physics,47(5),3346-3349 part 1. |
| MLA | Wei, TB,et al."Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy".japanese journal of applied physics 47.5(2008):3346-3349 part 1. |
入库方式： OAI收割
来源：半导体研究所
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