Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix
文献类型：期刊论文
| 作者 | Lv, XQ ; Liu, N ; Jin, P ; Wang, ZG |
| 刊名 | ieee photonics technology letters
 |
| 出版日期 | 2008 |
| 卷号 | 20期号:17-20页码:1742-1744 |
| 关键词 | AlGaAs matrix broadband emitting quantum dots (QDs) superluminescent diodes (SLDs) |
| ISSN号 | 1041-1135 |
| 通讯作者 | jin, p, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: pengjin@red.semi.ac.cn |
| 中文摘要 | superluminescent diodes were fabricated by using inas-algaas self-assembled quantum dots (qds) as the active region. the ultrawide emitting spectrum of 142 nm was achieved. the short migration length of indium adatoms on algaas surface increases the size dispersion of inas qds, resulting in the broadening of optical gain spectrum. |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6414]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Lv, XQ,Liu, N,Jin, P,et al. Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix[J]. ieee photonics technology letters,2008,20(17-20):1742-1744. |
| APA | Lv, XQ,Liu, N,Jin, P,&Wang, ZG.(2008).Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix.ieee photonics technology letters,20(17-20),1742-1744. |
| MLA | Lv, XQ,et al."Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix".ieee photonics technology letters 20.17-20(2008):1742-1744. |
入库方式： OAI收割
来源：半导体研究所
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