Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate
文献类型：期刊论文
| 作者 | Yin ZG ; Zhang XW
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 93期号:14页码:art. no. 142109 |
| 关键词 | MAGNETIC-PROPERTIES |
| ISSN号 | 0003-6951 |
| 通讯作者 | yin, zg, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: yzhg@semi.ac.cn |
| 中文摘要 | we have investigated the magnetic properties of co-doped zinc oxide (zno) film deposited on silicon substrate by magnetron sputtering. co ions have a valence of 2+ and substitute for zn sites in the lattice. by using a chemical etching method, an extrinsic ferromagnetism was demonstrated. the observed ferromagnetism is neither associated with magnetic precipitates nor with contamination, but originates from the silicon/silicon oxide interface. this interface ferromagnetism is characterized by being temperature independent and by having a parallel magnetic anisotropy. (c) 2008 american institute of physics. [doi: 10.1063/1.2989128] |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | special funds for major state basic research projects 2002cb311905 national natural science foundation of china 60576010 this work was partly supported by the special funds for major state basic research projects (2002cb311905) and by the national natural science foundation of china (grant no. 60576010) |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6420]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yin ZG,Zhang XW. Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate[J]. applied physics letters,2008,93(14):art. no. 142109. |
| APA | Yin ZG,&Zhang XW.(2008).Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate.applied physics letters,93(14),art. no. 142109. |
| MLA | Yin ZG,et al."Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate".applied physics letters 93.14(2008):art. no. 142109. |
入库方式： OAI收割
来源：半导体研究所
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