Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2
文献类型：期刊论文
| 作者 | Ma, P ; Gai, YQ ; Wang, JX ; Yang, FH ; Zeng, YP ; Li, JM ; Li, JB |
| 刊名 | applied physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 93期号:10页码:art. no. 102112 |
| 关键词 | P-TYPE GAN MOLECULAR-BEAM EPITAXY AUGMENTED-WAVE METHOD VAPOR-PHASE EPITAXY ELECTRICAL-PROPERTIES OXYGEN ACTIVATION SILICON |
| ISSN号 | 0003-6951 |
| 通讯作者 | ma, p, chinese acad sci, inst semicond, int cooperat base solid state lighting, pob 912, beijing 100083, peoples r china. 电子邮箱地址: yqgai@semi.ac.cn ; jbli@semi.ac.cn |
| 中文摘要 | ingan/gan multi-quantum-well blue (461 +/- 4 nm) light emitting diodes with higher electroluminescence intensity are obtained by postgrowth thermal annealing at 720 c in o-2-ambient. based on our first-principle total-energy calculations, we conclude that besides dissociating the mg-h complex by forming h2o, annealing in o-2 has another positive effect on the activation of acceptor mg in gan. mg can be further activated by the formation of an impurity band above the valence band maximum of host gan from the passivated mg-ga-o-n complex. our calculated ionization energy for acceptor mg in the passivated system is about 30 mev shallower than that in pure gan, in good agreement with previous experimental measurement. our model can explain that the enhanced electroluminescence intensity of ingan/gan mqws based on mg-doped p-type gan is due to a decrease in the ionization energy of mg acceptor with the presence of oxygen. (c) 2008 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | chinese academy of sciences national natural science foundation of china national high technology research and development program of china 2006aa03a22 j.l. gratefully acknowledges financial support from the "one-hundred talents plan" of the chinese academy of sciences. this work was supported by the national natural science foundation of china and the national high technology research and development program of china under contract no. 2006aa03a22. |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6434]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ma, P,Gai, YQ,Wang, JX,et al. Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2[J]. applied physics letters,2008,93(10):art. no. 102112. |
| APA | Ma, P.,Gai, YQ.,Wang, JX.,Yang, FH.,Zeng, YP.,...&Li, JB.(2008).Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2.applied physics letters,93(10),art. no. 102112. |
| MLA | Ma, P,et al."Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2".applied physics letters 93.10(2008):art. no. 102112. |
入库方式： OAI收割
来源：半导体研究所
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