High-temperature AlN interlayer for crack-free AlGaN growth on GaN
文献类型：期刊论文
| 作者 | Sun, Q ; Wang, JT ; Wang, H ; Jin, RQ ; Jiang, DS ; Zhu, JJ ; Zhao, DG ; Yang, H ; Zhou, SQ ; Wu, MF ; Smeets, D ; Vantomme, A |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2008 |
| 卷号 | 104期号:4页码:art. no. 043516 |
| 关键词 | STRESS SI(111) REDUCTION THICKNESS |
| ISSN号 | 0021-8979 |
| 通讯作者 | sun, q, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: sunqian519@gmail.com |
| 中文摘要 | this paper presents a study of the transformation of high-temperature aln (ht-aln) interlayer (il) and its effect on the strain relaxation of al0.25ga0.75n/ht-aln/gan. the ht-aln il capped with al0.25ga0.75n transforms into algan il in which the al composition increases with the ht-aln il thickness while the total ga content keeps nearly constant. during the ht-aln il growth on gan, the tensile stress is relieved through the formation of v trenches. the filling up of the v trenches by the subsequent al0.25ga0.75n growth is identified as the ga source for the il transformation, whose effect is very different from a direct growth of ht-algan il. the a-type dislocations generated during the advancement of v trenches and their filling up propagate into the al0.25ga0.75n overlayer. the a-type dislocation density increases dramatically with the il thickness, which greatly enhances the strain relaxation of al0.25ga0.75n. (c) 2008 american institute of physics. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 60476021 69825107fund for scientific research, flanders (fwo) concerted action of the kuleuven goa/2004/02 inter-university attraction pole iuapp6/42 center of excellence programme inpac ef/05/005 bilateral cooperation between flanders and china bil 07/03 this work was supported by the national natural science foundation of china (grant nos. 60476021 and 69825107). the fund for scientific research, flanders (fwo), the concerted action of the kuleuven (goa/2004/02), the inter-university attraction pole (iuapp6/42), the center of excellence programme (inpac ef/05/005), and the bilateral cooperation between flanders and china (bil 07/03). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6468]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun, Q,Wang, JT,Wang, H,et al. High-temperature AlN interlayer for crack-free AlGaN growth on GaN[J]. journal of applied physics,2008,104(4):art. no. 043516. |
| APA | Sun, Q.,Wang, JT.,Wang, H.,Jin, RQ.,Jiang, DS.,...&Vantomme, A.(2008).High-temperature AlN interlayer for crack-free AlGaN growth on GaN.journal of applied physics,104(4),art. no. 043516. |
| MLA | Sun, Q,et al."High-temperature AlN interlayer for crack-free AlGaN growth on GaN".journal of applied physics 104.4(2008):art. no. 043516. |
入库方式： OAI收割
来源：半导体研究所
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