中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Single-photon emission at liquid nitrogen temperature from a single InAs/GaAs quantum dot

文献类型:期刊论文

作者Chang XY
刊名chinese physics letters
出版日期2008
卷号25期号:9页码:3231-3233
ISSN号0256-307x
关键词FLUORESCENCE
通讯作者dou, xm, chinese acad sci, inst semicond, sklsm, pob 912, beijing 100083, peoples r china. 电子邮箱地址: bqsun@red.semi.ac.cn
中文摘要we report on the single photon emission from single inas/gaas self-assembled stranski-krastanow quantum dots up to 80k under pulsed and continuous wave excitations. at temperature 80 k, the second-order correlation function at zero time delay, g((2))(0), is measured to be 0.422 for pulsed excitation. at the same temperature under continuous wave excitation, the photon antibunching effect is observed. thus, our experimental results demonstrate a promising potential application of self-assembled inas/gaas quantum dots in single photon emission at liquid nitrogen temperature.
学科主题半导体物理
资助信息national natural science foundation of china 60676054 1073406060625405national basic research programme of china 2007cb924904 knowledge innovation programme of chinese academy of sciences kjcx2.yw.w09-1 supported by the national natural science foundation of china under grant nos 60676054, 10734060 and 60625405, and the national basic research programme of china under grant no 2007cb924904, and the knowledge innovation programme of chinese academy of sciences under grant no kjcx2.yw.w09-1.
收录类别SCI
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/6478]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Chang XY. Single-photon emission at liquid nitrogen temperature from a single InAs/GaAs quantum dot[J]. chinese physics letters,2008,25(9):3231-3233.
APA Chang XY.(2008).Single-photon emission at liquid nitrogen temperature from a single InAs/GaAs quantum dot.chinese physics letters,25(9),3231-3233.
MLA Chang XY."Single-photon emission at liquid nitrogen temperature from a single InAs/GaAs quantum dot".chinese physics letters 25.9(2008):3231-3233.

入库方式: OAI收割

来源:半导体研究所

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