Single-photon emission at liquid nitrogen temperature from a single InAs/GaAs quantum dot
文献类型:期刊论文
作者 | Chang XY |
刊名 | chinese physics letters |
出版日期 | 2008 |
卷号 | 25期号:9页码:3231-3233 |
ISSN号 | 0256-307x |
关键词 | FLUORESCENCE |
通讯作者 | dou, xm, chinese acad sci, inst semicond, sklsm, pob 912, beijing 100083, peoples r china. 电子邮箱地址: bqsun@red.semi.ac.cn |
中文摘要 | we report on the single photon emission from single inas/gaas self-assembled stranski-krastanow quantum dots up to 80k under pulsed and continuous wave excitations. at temperature 80 k, the second-order correlation function at zero time delay, g((2))(0), is measured to be 0.422 for pulsed excitation. at the same temperature under continuous wave excitation, the photon antibunching effect is observed. thus, our experimental results demonstrate a promising potential application of self-assembled inas/gaas quantum dots in single photon emission at liquid nitrogen temperature. |
学科主题 | 半导体物理 |
资助信息 | national natural science foundation of china 60676054 1073406060625405national basic research programme of china 2007cb924904 knowledge innovation programme of chinese academy of sciences kjcx2.yw.w09-1 supported by the national natural science foundation of china under grant nos 60676054, 10734060 and 60625405, and the national basic research programme of china under grant no 2007cb924904, and the knowledge innovation programme of chinese academy of sciences under grant no kjcx2.yw.w09-1. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-03-08 |
源URL | [http://ir.semi.ac.cn/handle/172111/6478] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Chang XY. Single-photon emission at liquid nitrogen temperature from a single InAs/GaAs quantum dot[J]. chinese physics letters,2008,25(9):3231-3233. |
APA | Chang XY.(2008).Single-photon emission at liquid nitrogen temperature from a single InAs/GaAs quantum dot.chinese physics letters,25(9),3231-3233. |
MLA | Chang XY."Single-photon emission at liquid nitrogen temperature from a single InAs/GaAs quantum dot".chinese physics letters 25.9(2008):3231-3233. |
入库方式: OAI收割
来源:半导体研究所
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