中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots

文献类型:期刊论文

作者Dou, XM ; Sun, BQ ; Xiong, YH ; Huang, SS ; Ni, HQ ; Niu, ZC
刊名chinese physics letters
出版日期2008
卷号25期号:9页码:3440-3443
关键词CARRIER RELAXATION ENERGY RELAXATION LINE-SHAPE EMISSION DENSITY
ISSN号0256-307x
通讯作者dou, xm, chinese acad sci, inst semicond, sklsm, pob 912, beijing 100083, peoples r china. 电子邮箱地址: bqsun@red.semi.ac.cn
中文摘要we investigate the temperature dependence of photoluminescence from single and ensemble inas/gaas quantum dots systematically. as temperature increases, the exciton emission peak for single quantum dot shows broadening and redshift. for ensemble quantum dots, however, the exciton emission peak shows narrowing and fast redshift. we use a simple steady-state rate equation model to simulate the experimental data of photoluminescence spectra. it is confirmed that carrier-phonon scattering gives the broadening of the exciton emission peak in single quantum dots while the effects of carrier thermal escape and retrapping play an important role in the narrowing and fast redshift of the exciton emission peak in ensemble quantum dots.
学科主题半导体物理
收录类别SCI
资助信息national natural science foundation of china 60676054 knowledge innovation project of chinese academy of sciences kjcx2.yw.w09-3 national basic research programme of china 2007cb924904 supported by the national natural science foundation of china under grant no 60676054, the knowledge innovation project of chinese academy of sciences (kjcx2.yw.w09-3), and the national basic research programme of china under grant no 2007cb924904
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/6480]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Dou, XM,Sun, BQ,Xiong, YH,et al. Temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots[J]. chinese physics letters,2008,25(9):3440-3443.
APA Dou, XM,Sun, BQ,Xiong, YH,Huang, SS,Ni, HQ,&Niu, ZC.(2008).Temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots.chinese physics letters,25(9),3440-3443.
MLA Dou, XM,et al."Temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots".chinese physics letters 25.9(2008):3440-3443.

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来源:半导体研究所

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