Temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots
文献类型:期刊论文
作者 | Dou, XM ; Sun, BQ ; Xiong, YH ; Huang, SS ; Ni, HQ ; Niu, ZC |
刊名 | chinese physics letters
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出版日期 | 2008 |
卷号 | 25期号:9页码:3440-3443 |
关键词 | CARRIER RELAXATION ENERGY RELAXATION LINE-SHAPE EMISSION DENSITY |
ISSN号 | 0256-307x |
通讯作者 | dou, xm, chinese acad sci, inst semicond, sklsm, pob 912, beijing 100083, peoples r china. 电子邮箱地址: bqsun@red.semi.ac.cn |
中文摘要 | we investigate the temperature dependence of photoluminescence from single and ensemble inas/gaas quantum dots systematically. as temperature increases, the exciton emission peak for single quantum dot shows broadening and redshift. for ensemble quantum dots, however, the exciton emission peak shows narrowing and fast redshift. we use a simple steady-state rate equation model to simulate the experimental data of photoluminescence spectra. it is confirmed that carrier-phonon scattering gives the broadening of the exciton emission peak in single quantum dots while the effects of carrier thermal escape and retrapping play an important role in the narrowing and fast redshift of the exciton emission peak in ensemble quantum dots. |
学科主题 | 半导体物理 |
收录类别 | SCI |
资助信息 | national natural science foundation of china 60676054 knowledge innovation project of chinese academy of sciences kjcx2.yw.w09-3 national basic research programme of china 2007cb924904 supported by the national natural science foundation of china under grant no 60676054, the knowledge innovation project of chinese academy of sciences (kjcx2.yw.w09-3), and the national basic research programme of china under grant no 2007cb924904 |
语种 | 英语 |
公开日期 | 2010-03-08 |
源URL | [http://ir.semi.ac.cn/handle/172111/6480] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Dou, XM,Sun, BQ,Xiong, YH,et al. Temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots[J]. chinese physics letters,2008,25(9):3440-3443. |
APA | Dou, XM,Sun, BQ,Xiong, YH,Huang, SS,Ni, HQ,&Niu, ZC.(2008).Temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots.chinese physics letters,25(9),3440-3443. |
MLA | Dou, XM,et al."Temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots".chinese physics letters 25.9(2008):3440-3443. |
入库方式: OAI收割
来源:半导体研究所
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