The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD
文献类型：期刊论文
| 作者 | Luo, WJ ; Wang, XL ; Guo, LC ; Xiao, HL ; Wang, CM ; Ran, JX ; Li, JP ; Li, JM |
| 刊名 | superlattices and microstructures
 |
| 出版日期 | 2008 |
| 卷号 | 44期号:2页码:153-159 |
| 关键词 | gallium nitride crack low temperature aluminum nitride interlayer silicon |
| ISSN号 | 0749-6036 |
| 通讯作者 | luo, wj, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: luoweijun@mail.semi.ac.cn |
| 中文摘要 | low temperature (lt) aln interlayers were used to effectively reduce the tension stress and micro-cracks on the surface of the gan epilayer grown on si (111) substrate. optical microscopy (om), atomic force microscopy (afm), surface electron microscopy (sem) and x-ray diffraction (xrd) were employed to characterize these samples grown by metal-organic chemical vapor deposition (mocvd). in addition, wet etching method was used to evaluate the defect of the gan epilayer. the results demonstrate that the morphology and crystalline properties of the gan epilayer strongly depend on the thickness, interlayer number and growth temperature of the lt aln interlayer. with the optimized lt aln interlayer structures, high quality gan epilayers with a low crack density can be obtained. (c) 2008 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | key innovation program of chinese academy of sciences kgcx2-sw-107-1 national natural science foundation of china 60606002 major state basic research projects 2002cb311903 2006cb604905 513270605this work has been supported by key innovation program of chinese academy of sciences (no. kgcx2-sw-107-1), national natural science foundation of china (no. 60606002); special funds for major state basic research projects (no. 2002cb311903, 2006cb604905 and 513270605). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6486]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Luo, WJ,Wang, XL,Guo, LC,et al. The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD[J]. superlattices and microstructures,2008,44(2):153-159. |
| APA | Luo, WJ.,Wang, XL.,Guo, LC.,Xiao, HL.,Wang, CM.,...&Li, JM.(2008).The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD.superlattices and microstructures,44(2),153-159. |
| MLA | Luo, WJ,et al."The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD".superlattices and microstructures 44.2(2008):153-159. |
入库方式： OAI收割
来源：半导体研究所
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