中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD

文献类型:期刊论文

作者Luo, WJ ; Wang, XL ; Guo, LC ; Xiao, HL ; Wang, CM ; Ran, JX ; Li, JP ; Li, JM
刊名superlattices and microstructures
出版日期2008
卷号44期号:2页码:153-159
关键词gallium nitride crack low temperature aluminum nitride interlayer silicon
ISSN号0749-6036
通讯作者luo, wj, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: luoweijun@mail.semi.ac.cn
中文摘要low temperature (lt) aln interlayers were used to effectively reduce the tension stress and micro-cracks on the surface of the gan epilayer grown on si (111) substrate. optical microscopy (om), atomic force microscopy (afm), surface electron microscopy (sem) and x-ray diffraction (xrd) were employed to characterize these samples grown by metal-organic chemical vapor deposition (mocvd). in addition, wet etching method was used to evaluate the defect of the gan epilayer. the results demonstrate that the morphology and crystalline properties of the gan epilayer strongly depend on the thickness, interlayer number and growth temperature of the lt aln interlayer. with the optimized lt aln interlayer structures, high quality gan epilayers with a low crack density can be obtained. (c) 2008 elsevier ltd. all rights reserved.
学科主题半导体物理
收录类别SCI
资助信息key innovation program of chinese academy of sciences kgcx2-sw-107-1 national natural science foundation of china 60606002 major state basic research projects 2002cb311903 2006cb604905 513270605this work has been supported by key innovation program of chinese academy of sciences (no. kgcx2-sw-107-1), national natural science foundation of china (no. 60606002); special funds for major state basic research projects (no. 2002cb311903, 2006cb604905 and 513270605).
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/6486]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Luo, WJ,Wang, XL,Guo, LC,et al. The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD[J]. superlattices and microstructures,2008,44(2):153-159.
APA Luo, WJ.,Wang, XL.,Guo, LC.,Xiao, HL.,Wang, CM.,...&Li, JM.(2008).The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD.superlattices and microstructures,44(2),153-159.
MLA Luo, WJ,et al."The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD".superlattices and microstructures 44.2(2008):153-159.

入库方式: OAI收割

来源:半导体研究所

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