Compact voltage-mode multi-valued literal gate using nanoscale ballistic MOSFETs
文献类型：期刊论文
| 作者 | Zhang, WC ; Wu, NJ |
| 刊名 | electronics letters
 |
| 出版日期 | 2008 |
| 卷号 | 44期号:16页码:968-969 |
| 关键词 | MULTIPLE-VALUED LOGIC IMPLEMENTATION DESIGN |
| ISSN号 | 0013-5194 |
| 通讯作者 | zhang, wc, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zhangwc@red.semi.ac.cn |
| 中文摘要 | a cmos voltage-mode multi-valued literal gate is presented. the ballistic electron transport characteristic of nanoscale mosfets is smartly used to compactly achieve universal radix-4 literal operations. the proposed literal gates have small numbers of transistors and low power dissipations, which makes them promising for future nanoscale multi-valued circuits. the gates are simulated by hspice. |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6510]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang, WC,Wu, NJ. Compact voltage-mode multi-valued literal gate using nanoscale ballistic MOSFETs[J]. electronics letters,2008,44(16):968-969. |
| APA | Zhang, WC,&Wu, NJ.(2008).Compact voltage-mode multi-valued literal gate using nanoscale ballistic MOSFETs.electronics letters,44(16),968-969. |
| MLA | Zhang, WC,et al."Compact voltage-mode multi-valued literal gate using nanoscale ballistic MOSFETs".electronics letters 44.16(2008):968-969. |
入库方式： OAI收割
来源：半导体研究所
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