Electronic states of InAs/GaAs tyre-shape quantum ring
文献类型：期刊论文
| 作者 | Wang, CD ; Yang, FH ; Feng, SL |
| 刊名 | chinese physics b
 |
| 出版日期 | 2008 |
| 卷号 | 17期号:8页码:3054-3057 |
| 关键词 | tyre-shape quantum ring (TSQR) plan wave energy level |
| ISSN号 | 1674-1056 |
| 通讯作者 | wang, cd, chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: cdwang@semi.ac.cn |
| 中文摘要 | in the framework of the effective mass theory, this paper calculates the electron energy levels of an inas/gaas tyre-shape quantum ring (tsqr) by using the plane wave basis. the results show that the electron energy levels are sensitively dependent on the tsqr's section thickness d, and insensitively dependent on tsqr's section inner radius r-1 and tsqr's inner radius r-2. the model and results provide useful information for the design and fabrication of inas/gaas tsqrs. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china 60521001 project supported by the national natural science foundation of china (grant no 60521001). |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6514]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang, CD,Yang, FH,Feng, SL. Electronic states of InAs/GaAs tyre-shape quantum ring[J]. chinese physics b,2008,17(8):3054-3057. |
| APA | Wang, CD,Yang, FH,&Feng, SL.(2008).Electronic states of InAs/GaAs tyre-shape quantum ring.chinese physics b,17(8),3054-3057. |
| MLA | Wang, CD,et al."Electronic states of InAs/GaAs tyre-shape quantum ring".chinese physics b 17.8(2008):3054-3057. |
入库方式： OAI收割
来源：半导体研究所
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