Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well
文献类型：期刊论文
| 作者 | Shang, LY ; Lin, T ; Zhou, WZ ; Li, DL ; Gao, HL ; Zeng, YP ; Guo, SL ; Yu, GL ; Chu, JH |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2008 |
| 卷号 | 57期号:8页码:5232-5236 |
| 关键词 | two-dimensional electron gas positive magnetoresistance intersubband scattering |
| ISSN号 | 1000-3290 |
| 通讯作者 | chu, jh, chinese acad sci, natl lab infrared phys, shanghai inst tech phys, shanghai 200083, peoples r china. 电子邮箱地址: jhchu@mail.sitp.ac.cn |
| 中文摘要 | magnetotransport measurements have been carried out on in0.53ga0.17as/in0.52al0.48 as quantum wells in a temperature range between 1.5 and 77 k. we have observed a large positive magnetoresistance in the low magnetic field range, but saturating in high magnetic fields. the magnetoresistance results from two occupied subbands in the two-dimensional electron gas. with the intersubband scattering considered, we obtained the subband mobility by analyzing the positive magnetoresistance. it is found that the second subband mobility is larger than that of the first due to the existence of the intersubband scattering. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6520]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Shang, LY,Lin, T,Zhou, WZ,et al. Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well[J]. acta physica sinica,2008,57(8):5232-5236. |
| APA | Shang, LY.,Lin, T.,Zhou, WZ.,Li, DL.,Gao, HL.,...&Chu, JH.(2008).Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well.acta physica sinica,57(8),5232-5236. |
| MLA | Shang, LY,et al."Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well".acta physica sinica 57.8(2008):5232-5236. |
入库方式： OAI收割
来源：半导体研究所
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