First-principles study of defects in CuGaO2
文献类型：期刊论文
| 作者 | Fang, ZJ ; Fang, C ; Shi, LJ ; Liu, YH ; He, MC |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:8页码:2997-3000 |
| 关键词 | PULSED-LASER DEPOSITION AUGMENTED-WAVE METHOD ELECTRICAL-CONDUCTION DELAFOSSITE STRUCTURE THIN-FILMS TRANSPARENT CUALO2 CUINO2 OXIDE |
| ISSN号 | 0256-307x |
| 通讯作者 | fang, zj, china univ min & technol, sch mech & civil engn, beijing 100083, peoples r china. 电子邮箱地址: nnfang@semi.ac.cn |
| 中文摘要 | using the first-principles methods, we study the electronic structure, intrinsic and extrinsic defects doping in transparent conducting oxides cugao2. intrinsic defects, acceptor-type and donor-type extrinsic defects in their relevant charge state are considered. the calculation result show that copper vacancy and oxygen interstitial are the relevant defects in cugao2. in addition, copper vacancy is the most efficient acceptor. substituting be for ga is the prominent acceptor, and substituting ca for cu is the prominent donors in cugao2. our calculation results are expected to be a guide for preparing n-type and p-type materials in cugao2. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6532]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Fang, ZJ,Fang, C,Shi, LJ,et al. First-principles study of defects in CuGaO2[J]. chinese physics letters,2008,25(8):2997-3000. |
| APA | Fang, ZJ,Fang, C,Shi, LJ,Liu, YH,&He, MC.(2008).First-principles study of defects in CuGaO2.chinese physics letters,25(8),2997-3000. |
| MLA | Fang, ZJ,et al."First-principles study of defects in CuGaO2".chinese physics letters 25.8(2008):2997-3000. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。