Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains
文献类型：期刊论文
| 作者 | Wang, BR ; Sun, BQ ; Ji, Y ; Dou, XM ; Xu, ZY ; Wang, ZM ; Salamo, GJ |
| 刊名 | applied physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 93期号:1页码:art. no. 011107 |
| 关键词 | LOCALIZED STATES ISLANDS WIRES SUPERLATTICES ORGANIZATION GAAS(100) EXCITONS GROWTH DECAY GAAS |
| ISSN号 | 0003-6951 |
| 通讯作者 | wang, br, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: brwang04@semi.ac.cn |
| 中文摘要 | we have studied the lateral carrier transfer in a specially designed quantum dot chain structure by means of time-resolved photoluminescence (pl) and polarization pl. the pl decay time increases with temperature, following the t-1/2 law for the typical one-dimensional quantum system. the decay time depends strongly on the emission energy: it decreases as the photon energy increases. moreover, a strong polarization anisotropy is observed. these results are attributed to the efficient lateral transfer of carriers along the chain direction. (c) 2008 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6538]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang, BR,Sun, BQ,Ji, Y,et al. Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains[J]. applied physics letters,2008,93(1):art. no. 011107. |
| APA | Wang, BR.,Sun, BQ.,Ji, Y.,Dou, XM.,Xu, ZY.,...&Salamo, GJ.(2008).Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains.applied physics letters,93(1),art. no. 011107. |
| MLA | Wang, BR,et al."Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains".applied physics letters 93.1(2008):art. no. 011107. |
入库方式： OAI收割
来源：半导体研究所
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