Voltage tunable two-color InAs/GaAs quantum dot infrared photodetector
文献类型：期刊论文
| 作者 | Yang T ; Ma WQ
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2008 |
| 卷号 | 93期号:1页码:art. no. 013502 |
| 关键词 | DETECTOR |
| ISSN号 | 0003-6951 |
| 通讯作者 | ma, wq, chinese acad sci, inst semicond, lab nanooptoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wqma@semi.ac.cn |
| 中文摘要 | we report a bias voltage tunable two-color inas/gaas quantum dot infrared photodetector working under the normal incidence infared irradiation. the two-color detection of our device is realized by combining a photovoltaic and a photoconductive response by bias voltage tuning. the photovoltaic response is attributed to the transition of electron from the ground state to a high continuum state. the photoconductive response arises from the transition of electron from the ground state to the wetting layer state through the barrier via fowler-nordheim tunneling evidenced by a broad feature of the photocurrent peak on the high energy side. (c) 2008 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6540]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang T,Ma WQ. Voltage tunable two-color InAs/GaAs quantum dot infrared photodetector[J]. applied physics letters,2008,93(1):art. no. 013502. |
| APA | Yang T,&Ma WQ.(2008).Voltage tunable two-color InAs/GaAs quantum dot infrared photodetector.applied physics letters,93(1),art. no. 013502. |
| MLA | Yang T,et al."Voltage tunable two-color InAs/GaAs quantum dot infrared photodetector".applied physics letters 93.1(2008):art. no. 013502. |
入库方式： OAI收割
来源：半导体研究所
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