Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors
文献类型：期刊论文
| 作者 | Zhou, M ; Zhao, DG |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2008 |
| 卷号 | 57期号:7页码:4570-4574 |
| ISSN号 | 1000-3290 |
| 关键词 | GaN Ultraviolet photodetector quantum efficiency dark current |
| 通讯作者 | zhao, dg, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: dgzhao@red.semi.ac.cn |
| 中文摘要 | we investigated the influence of thickness of p-gan layer on the performance of p-i-n structure gan ultraviolet photodetector. through the simulation calculation, it was found that both the quantum efficiency and dark current of device decrease when employing thicker p-gan layer, while both the quantum efficiency and dark current increase with decreasing thickness of p-gan layer. it is suggested that the schottky contact junction between the metal and p-gan may be responsible for the incompatible effect. we has to make a suitable choice of the thickness of p-gan in the device design according to the application requirement. |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6544]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou, M,Zhao, DG. Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors[J]. acta physica sinica,2008,57(7):4570-4574. |
| APA | Zhou, M,&Zhao, DG.(2008).Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors.acta physica sinica,57(7),4570-4574. |
| MLA | Zhou, M,et al."Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors".acta physica sinica 57.7(2008):4570-4574. |
入库方式： OAI收割
来源：半导体研究所
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