n-type Ge-SiGe quantum cascade structure utilizing quantum wells for electrons in the L and Gamma valleys
文献类型：期刊论文
| 作者 | Han, GQ ; Yu, JZ ; Liu, Y |
| 刊名 | ieee photonics technology letters
 |
| 出版日期 | 2008 |
| 卷号 | 20期号:39941页码:419-421 |
| 关键词 | quantum cascade (QC) structure SiGe |
| ISSN号 | 1041-1135 |
| 通讯作者 | han, gq, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: hgquan@red.semi.ac.cn ; jzyu@red.semi.ac.cn ; liuyan@red.semi.ac.cn |
| 中文摘要 | in this letter, we propose an n-type vertical transition bound-to-continuum ge-sige quantum cascade structure utilizing electronic quantum wells in the l and f valleys of the ge layers. the optical transition levels are located in the quantum wells in the l valley. under a bias of 80 kv/cm, the carriers in the lower level are extracted by miniband transport and l - gamma tunneling into the subband in the gamma well of the next period. and then the electrons are injected into the upper level by ultrafast intervalley scattering, which not only effectively increases the tunneling rate and suppresses the thermal backfilling of electrons, but also enhances the injection efficiency of the upper level. the performance of the laser is discussed. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6550]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han, GQ,Yu, JZ,Liu, Y. n-type Ge-SiGe quantum cascade structure utilizing quantum wells for electrons in the L and Gamma valleys[J]. ieee photonics technology letters,2008,20(39941):419-421. |
| APA | Han, GQ,Yu, JZ,&Liu, Y.(2008).n-type Ge-SiGe quantum cascade structure utilizing quantum wells for electrons in the L and Gamma valleys.ieee photonics technology letters,20(39941),419-421. |
| MLA | Han, GQ,et al."n-type Ge-SiGe quantum cascade structure utilizing quantum wells for electrons in the L and Gamma valleys".ieee photonics technology letters 20.39941(2008):419-421. |
入库方式： OAI收割
来源：半导体研究所
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