Fabrication and characterization of GaN-based LEDs grown on nanopatterned sapphire substrates
文献类型：期刊论文
| 作者 | Gao, HY ; Yan, FW ; Zhang, Y ; Li, JM ; Zeng, YP ; Wang, GH |
| 刊名 | physica status solidi a-applications and materials science
 |
| 出版日期 | 2008 |
| 卷号 | 205期号:7页码:1719-1723 |
| 关键词 | LIGHT-EMITTING-DIODES EPITAXIAL LATERAL OVERGROWTH IMPROVEMENT NITRIDE WET |
| ISSN号 | 1862-6300 |
| 通讯作者 | gao, hy, chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china. 电子邮箱地址: hygao@semi.ac.cn |
| 中文摘要 | sapphire substrates were nanopatterned by dry (inductively coupled plasma, icp) etching to improve the performance of gan-based light-emitting diodes (leds). gan-based leds on nanopatterned sapphire substrates (npss) were fabricated by metal organic chemical vapor deposition (mocvd). the characteristics of leds fabricated on npss prepared by dry etching were studied. the light output power and wall-plug efficiency of the leds fabricated on npss were greater than those of the conventional leds fabricated on common planar sapphire substrates when the injection currents were the same. the leds on npss and common planar sapphire substrates have similar i-v characteristics. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6560]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gao, HY,Yan, FW,Zhang, Y,et al. Fabrication and characterization of GaN-based LEDs grown on nanopatterned sapphire substrates[J]. physica status solidi a-applications and materials science,2008,205(7):1719-1723. |
| APA | Gao, HY,Yan, FW,Zhang, Y,Li, JM,Zeng, YP,&Wang, GH.(2008).Fabrication and characterization of GaN-based LEDs grown on nanopatterned sapphire substrates.physica status solidi a-applications and materials science,205(7),1719-1723. |
| MLA | Gao, HY,et al."Fabrication and characterization of GaN-based LEDs grown on nanopatterned sapphire substrates".physica status solidi a-applications and materials science 205.7(2008):1719-1723. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。