中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A low-cost CMOS programmable temperature

文献类型:期刊论文

作者Li, YL ; Wu, NJ
刊名sensors
出版日期2008
卷号8期号:5页码:3150-3164
关键词temperature switch floating gate neural MOS threshold temperature process compensation
ISSN号1424-8220
通讯作者wu, nj, chinese acad sci, inst semicond, natl lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: nanjian@red.semi.ac.cn
中文摘要a novel uncalibrated cmos programmable temperature switch with high temperature accuracy is presented. its threshold temperature t-th can be programmed by adjusting the ratios of width and length of the transistors. the operating principles of the temperature switch circuit is theoretically explained. a floating gate neural mos circuit is designed to compensate automatically the threshold temperature t-th variation that results form the process tolerance. the switch circuit is implemented in a standard 0.35 mu m cmos process. the temperature switch can be programmed to perform the switch operation at 16 different threshold temperature t(th)s from 45-120 degrees c with a 5 degrees c increment. the measurement shows a good consistency in the threshold temperatures. the chip core area is 0.04 mm(2) and power consumption is 3.1 mu a at 3.3v power supply. the advantages of the temperature switch are low power consumption, the programmable threshold temperature and the controllable hysteresis.
学科主题半导体化学
收录类别SCI
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/6572]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Li, YL,Wu, NJ. A low-cost CMOS programmable temperature[J]. sensors,2008,8(5):3150-3164.
APA Li, YL,&Wu, NJ.(2008).A low-cost CMOS programmable temperature.sensors,8(5),3150-3164.
MLA Li, YL,et al."A low-cost CMOS programmable temperature".sensors 8.5(2008):3150-3164.

入库方式: OAI收割

来源:半导体研究所

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