A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs
文献类型：期刊论文
| 作者 | Jiang, XW ; Deng, HX ; Luo, JW ; Li, SS ; Wang, LW |
| 刊名 | ieee transactions on electron devices
 |
| 出版日期 | 2008 |
| 卷号 | 55期号:7页码:1720-1726 |
| 关键词 | dopant fluctuation linear combination of bulk band (LCBB) MOSFET quantum mechanical threshold 3-D |
| ISSN号 | 0018-9383 |
| 通讯作者 | jiang, xw, chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: xwjiang@semi.ac.cn ; lwwang@lbl.gov |
| 中文摘要 | a fully 3-d atomistic quantum mechanical simulation is presented to study the random dopant-induced effects in nanometer metal-oxide-semiconductor field-effect transistors. the empirical pseudopotential is used to represent the single particle hamiltonian, and the linear combination of bulk band method is used to solve the million atom schrodinger equation. the gate threshold fluctuation and lowering due to the discrete dopant configurations are studied. it is found that quantum mechanical effects increase the threshold fluctuation while decreasing the threshold lowering. the increase of threshold fluctuation is in agreement with the researchers' early study based on an approximated density gradient approach. however, the decrease in threshold lowering is in contrast with the density gradient calculations. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6582]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang, XW,Deng, HX,Luo, JW,et al. A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs[J]. ieee transactions on electron devices,2008,55(7):1720-1726. |
| APA | Jiang, XW,Deng, HX,Luo, JW,Li, SS,&Wang, LW.(2008).A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs.ieee transactions on electron devices,55(7),1720-1726. |
| MLA | Jiang, XW,et al."A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs".ieee transactions on electron devices 55.7(2008):1720-1726. |
入库方式： OAI收割
来源：半导体研究所
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