中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Enhancement of field emission properties in La-doped ZnO films prepared by magnetron sputtering

文献类型:期刊论文

作者Li, J ; Wang, RZ ; Lan, W ; Zhang, XW ; Duan, ZQ ; Wang, B ; Yan, H
刊名chinese physics letters
出版日期2008
卷号25期号:7页码:2657-2660
关键词CVD DIAMOND FILMS WORK FUNCTION PHOTOCATALYTIC ACTIVITY AQUEOUS SUSPENSION THIN-FILMS DEGRADATION MICROSCOPY
ISSN号0256-307x
通讯作者li, j, beijing univ technol, coll mat sci & engn, lab thin film mat, beijing 100124, peoples r china. 电子邮箱地址: wrz@bjut.edu.cn
中文摘要field emissions (fe) from la-doped zinc oxide (zno) films are both experimentally and theoretically investigated. owing to the la-doped effect, the fe characteristic of zno films is remarkably enhanced compared with an undoped sample, and a startling low turn-on electric field of about 0.4 v/mu m (about 2.5 v/mu m for the undoped zno films) is obtained at an emission current density of 1 mu a/cm(2) and the stable current density reaches 1 ma/cm(2) at an applied field of about 2.1 v/mu m. a self-consistent theoretical analysis shows that the novel fe enhancement of the la-doped sample may be originated from its smaller work function. due to the effect of doping with la, the fermi energy level lifts, electrons which tunnelling from surface barrier are consumedly enhancing, and then leads to a huge change of field emission current. interestingly, it suggests a new effective method to improve the fe properties of film materials.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-03-08
源URL[http://ir.semi.ac.cn/handle/172111/6588]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Li, J,Wang, RZ,Lan, W,et al. Enhancement of field emission properties in La-doped ZnO films prepared by magnetron sputtering[J]. chinese physics letters,2008,25(7):2657-2660.
APA Li, J.,Wang, RZ.,Lan, W.,Zhang, XW.,Duan, ZQ.,...&Yan, H.(2008).Enhancement of field emission properties in La-doped ZnO films prepared by magnetron sputtering.chinese physics letters,25(7),2657-2660.
MLA Li, J,et al."Enhancement of field emission properties in La-doped ZnO films prepared by magnetron sputtering".chinese physics letters 25.7(2008):2657-2660.

入库方式: OAI收割

来源:半导体研究所

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