Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process
文献类型：期刊论文
| 作者 | Zhang, ZY ; Hogg, RA ; Xu, B ; Jin, P ; Wang, ZG |
| 刊名 | optics letters
 |
| 出版日期 | 2008 |
| 卷号 | 33期号:11页码:1210-1212 |
| 关键词 | LAYER |
| ISSN号 | 0146-9592 |
| 通讯作者 | zhang, zy, univ sheffield, dept elect & elect engn, sir frederick mappin bldg,mappin st, sheffield s1 3jd, s yorkshire, england. 电子邮箱地址: ziyang.zhang@shef.ac.uk |
| 中文摘要 | the first demonstration, to our knowledge, of the creation of ultrabroadband superluminescent light-emitting diodes using multiple quantum-dot layer structure by rapid thermal-annealing process is reported. the device exhibits a 3 db emission bandwidth of 146 nm centered at 984 mm with cw output power as high as 15 mw at room temperature corresponding to an extremely small coherence length of 6.6 mu m. (c) 2008 optical society of america. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6596]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang, ZY,Hogg, RA,Xu, B,et al. Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process[J]. optics letters,2008,33(11):1210-1212. |
| APA | Zhang, ZY,Hogg, RA,Xu, B,Jin, P,&Wang, ZG.(2008).Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process.optics letters,33(11),1210-1212. |
| MLA | Zhang, ZY,et al."Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process".optics letters 33.11(2008):1210-1212. |
入库方式： OAI收割
来源：半导体研究所
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