Comparative study of optical properties between quantum dot chains band quantum dots
文献类型：期刊论文
| 作者 | Wang, BR ; Sun, Z ; Xu, ZY ; Sun, BQ ; Ji, Y ; Wang, ZM ; Salamo, GJ |
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 2008 |
| 卷号 | 27期号:3页码:161-+ |
| 关键词 | InGaAs/GaAs quantum dots quantum dot chains optical properties |
| ISSN号 | 1001-9014 |
| 通讯作者 | wang, br, ch inese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. |
| 中文摘要 | a comparative study of the steady-state and transient optical properties was made between ingaas/gaas quantum do chains (qdcs) and quantum dots (qds). it was found that the photoluminescence (pl) decay time of qdcs exhibited a strong photon energy dependence, while it was less sensitive in qds. the pl decay time increased much faster with the excitation power in the qdcs than that in qds. when the excitation power was large enough, the pl decay time tended to be saturated. in addition, it was also found that the pl rise time was much shorter in qdcs than in qds. all these experimental results show that there is a strong carrier coupling along the chain direction in the qd chain structure. the polarization pl measurements further confirm the carrier transfer process along the chain direction. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6604]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang, BR,Sun, Z,Xu, ZY,et al. Comparative study of optical properties between quantum dot chains band quantum dots[J]. journal of infrared and millimeter waves,2008,27(3):161-+. |
| APA | Wang, BR.,Sun, Z.,Xu, ZY.,Sun, BQ.,Ji, Y.,...&Salamo, GJ.(2008).Comparative study of optical properties between quantum dot chains band quantum dots.journal of infrared and millimeter waves,27(3),161-+. |
| MLA | Wang, BR,et al."Comparative study of optical properties between quantum dot chains band quantum dots".journal of infrared and millimeter waves 27.3(2008):161-+. |
入库方式： OAI收割
来源：半导体研究所
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