High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region
文献类型：期刊论文
| 作者 | Zhang, ZY ; Hogg, RA ; Jin, P ; Choi, TL ; Xu, B ; Wang, ZG |
| 刊名 | ieee photonics technology letters
 |
| 出版日期 | 2008 |
| 卷号 | 20期号:40068页码:782-784 |
| 关键词 | molecular beam epitaxy (MBE) quantum dots (QDs) superlumineseent light-emitting diodes (SLEDs) |
| ISSN号 | 1041-1135 |
| 通讯作者 | zhang, zy, univ sheffield, dept elect & elect engn, sheffield s1 3jd, s yorkshire, england. 电子邮箱地址: ziyang.zhang@shef.ac.uk |
| 中文摘要 | high-power and broadband quantum-dot (qd) superluminescent light-emitting diodes are realized by using a combination of self-assembled qds with a high density, large inhomogeneous broadening, a tapered angled pump region, and etched v groove structure. this broad-area device exhibits greater than 70-nm 3-db bandwidth and drive current insensitive emission spectra with 100-mw output power under continuous-wave operation. for pulsed operation, greater than 200-mw output power is obtained. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6606]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang, ZY,Hogg, RA,Jin, P,et al. High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region[J]. ieee photonics technology letters,2008,20(40068):782-784. |
| APA | Zhang, ZY,Hogg, RA,Jin, P,Choi, TL,Xu, B,&Wang, ZG.(2008).High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region.ieee photonics technology letters,20(40068),782-784. |
| MLA | Zhang, ZY,et al."High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region".ieee photonics technology letters 20.40068(2008):782-784. |
入库方式： OAI收割
来源：半导体研究所
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