Investigation on the structural origin of n-type conductivity in InN films
文献类型：期刊论文
| 作者 | Wang, H ; Jiang, DS ; Wang, LL ; Sun, X ; Liu, WB ; Zhao, DG ; Zhu, JJ ; Liu, ZS ; Wang, YT ; Zhang, SM ; Yang, H |
| 刊名 | journal of physics d-applied physics
 |
| 出版日期 | 2008 |
| 卷号 | 41期号:13页码:art. no. 135403 |
| 关键词 | MOLECULAR-BEAM EPITAXY GAN FILMS DISLOCATION SCATTERING LAYER THICKNESS INDIUM NITRIDE BAND-GAP VACANCIES |
| ISSN号 | 0022-3727 |
| 通讯作者 | wang, h, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wangh@red.semi.ac.cn |
| 中文摘要 | this work presents a study of the correlation between the electrical properties and the structural defects in nominally undoped inn films. it is found that the density of edge-type threading dislocations (tds) considerably affects the electron concentration and mobility in inn films. the hall-effect measured electron concentration increases, while the hall mobility decreases with the increase in the edge-type td density. with the combination of secondary ion mass spectrometry and positron annihilation analysis, we suggest that donor-type point defects at the edge-type td lines may serve as dominant donors in inn films and affect the carrier mobility. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6620]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang, H,Jiang, DS,Wang, LL,et al. Investigation on the structural origin of n-type conductivity in InN films[J]. journal of physics d-applied physics,2008,41(13):art. no. 135403. |
| APA | Wang, H.,Jiang, DS.,Wang, LL.,Sun, X.,Liu, WB.,...&Yang, H.(2008).Investigation on the structural origin of n-type conductivity in InN films.journal of physics d-applied physics,41(13),art. no. 135403. |
| MLA | Wang, H,et al."Investigation on the structural origin of n-type conductivity in InN films".journal of physics d-applied physics 41.13(2008):art. no. 135403. |
入库方式： OAI收割
来源：半导体研究所
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