Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands
文献类型：期刊论文
| 作者 | Shang, LY ; Lin, T ; Zhou, WZ ; Guo, SL ; Li, DL ; Gao, HL ; Cui, LJ ; Zeng, YP ; Chu, JH |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2008 |
| 卷号 | 57期号:6页码:3818-3822 |
| 关键词 | In0.53Ga0.47As/In-0.52 Al0.48As quantum well filling factor magnetotransport measurement |
| ISSN号 | 1000-3290 |
| 通讯作者 | shang, ly, chinese acad sci, shanghai inst tech phys, natl lab infrared phys, shanghai 200083, peoples r china. 电子邮箱地址: liyshang@mail.sitp.ac.en |
| 中文摘要 | the magnetic field dependence of filling factors has been investigated on inp based in-0.53 ga0.47as/in-0.52 al-0.48 as quantum well samples with two occupied subbands by means of magnetotransport measurements at the temperature of 1.5 k in a magnetic field range of 0 to 13 t. under the condiction that laundau-level broadening is larger than the spin splitting of each subband, filling factors are even when the splitting energy of two subbands is an integer multiple of the cyclotron energy, i. e. delta e-21 = khw(c). if the splitting energy of two subbands is half of an odd interger multiple of the cyclotron erergy, i. e. delta e-21 = (2 k + 1) hw(c) /2, the filling factor is odd. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6622]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Shang, LY,Lin, T,Zhou, WZ,et al. Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands[J]. acta physica sinica,2008,57(6):3818-3822. |
| APA | Shang, LY.,Lin, T.,Zhou, WZ.,Guo, SL.,Li, DL.,...&Chu, JH.(2008).Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands.acta physica sinica,57(6),3818-3822. |
| MLA | Shang, LY,et al."Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands".acta physica sinica 57.6(2008):3818-3822. |
入库方式： OAI收割
来源：半导体研究所
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