Carrier spin relaxation in (Ga, Mn) As at room temperature
文献类型：期刊论文
| 作者 | Liu, XD ; Wang, WZ ; Gao, RX ; Zhao, JH ; Wen, JH ; Lin, WZ ; Lai, TS |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2008 |
| 卷号 | 57期号:6页码:3857-3861 |
| 关键词 | (Ga time-resolved Kerr spectroscopy electron spin relaxation DP mechanism Mn) As diluted magnetic semiconductor |
| ISSN号 | 1000-3290 |
| 通讯作者 | lai, ts, sun yat sen univ, dept phys, state key lab optoelect mat & technol, guangzhou 510275, guangdong, peoples r china. 电子邮箱地址: stslts@mail.sysu.edu.cn |
| 中文摘要 | in this paper, the excitation energy density dependence of carrier spin relaxation is studied at room temperature for the as-grown and annealed (ga, mn) as samples using femtosecond time-resolved pump-probe kerr spectroscopy. it is found that spin relaxation lifetime of electrons lengthens with increasing excitation energy density for both samples, and the annealed ( ga, mn) as has shorter carrier recombination and electron spin relaxation lifetimes as well as larger kerr rotation angle than the as-grown ( ga. mn) as under the same excitation condition. which shows that dp mechanism is dominant in the spin relaxation process for ( ga, mn)as at room temperature. the enhanced ultrafast kerr effect in the annealed (ga,mn)as shows the potential application of the annealed ( ga, mn) as in ultrafast all-optical spin switches, and also provides a further evidence for the p-d exchange mechanism of the ferromagnetic origin of (ga, mn) as. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6624]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu, XD,Wang, WZ,Gao, RX,et al. Carrier spin relaxation in (Ga, Mn) As at room temperature[J]. acta physica sinica,2008,57(6):3857-3861. |
| APA | Liu, XD.,Wang, WZ.,Gao, RX.,Zhao, JH.,Wen, JH.,...&Lai, TS.(2008).Carrier spin relaxation in (Ga, Mn) As at room temperature.acta physica sinica,57(6),3857-3861. |
| MLA | Liu, XD,et al."Carrier spin relaxation in (Ga, Mn) As at room temperature".acta physica sinica 57.6(2008):3857-3861. |
入库方式： OAI收割
来源：半导体研究所
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