Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well
文献类型：期刊论文
| 作者 | Yang, L ; Motohisa, J ; Tomioka, K ; Takeda, J ; Fukui, T ; Geng, MM ; Jia, LX ; Zhang, L ; Liu, YL |
| 刊名 | nanotechnology
 |
| 出版日期 | 2008 |
| 卷号 | 19期号:27页码:art. no. 275304 |
| 关键词 | INTERNAL ELECTRIC-FIELDS OPTICAL-PROPERTIES EPITAXIAL-GROWTH BUILDING-BLOCKS (111)B SURFACES NANOWIRES INTENSITY DEVICES GAAS |
| ISSN号 | 0957-4484 |
| 通讯作者 | yang, l, chinese acad sci, inst semicond, lab optoelect syst, beijing 100083, peoples r china. 电子邮箱地址: lyang@semi.ac.cn |
| 中文摘要 | hexagonal nanopillars with a single ingaas/gaas quantum well (qw) were fabricated on a gaas (111) b substrate by selective-area metal-organic vapor phase epitaxy. the standard deviations in diameter and height of the nanopillars are about 2% and 5%, respectively. zincblende structure and rotation twins were identified in both the gaas and the ingaas layers by electron diffraction. the excitation-power-density-dependent micro-photoluminescence (mu-pl) of the nanopillars was measured at 4.2, 50, 100 and 150 k. it was shown that, with increasing excitation power density, the mu-pl peak's positions shift to a higher energy, and their intensity and width increase, which were rationalized using a model that includes the effects of piezoelectricity, photon-screening and band-filling. it was also revealed that the rotation twins significantly reduce the diffusion length of the carriers in the nanopillars, compared to that in the regular semiconductors. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6640]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang, L,Motohisa, J,Tomioka, K,et al. Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well[J]. nanotechnology,2008,19(27):art. no. 275304. |
| APA | Yang, L.,Motohisa, J.,Tomioka, K.,Takeda, J.,Fukui, T.,...&Liu, YL.(2008).Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well.nanotechnology,19(27),art. no. 275304. |
| MLA | Yang, L,et al."Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well".nanotechnology 19.27(2008):art. no. 275304. |
入库方式： OAI收割
来源：半导体研究所
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