The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition
文献类型：期刊论文
| 作者 | Zhou ZW ; Li C ; Lai HK ; Chen SY ; Yu JZ |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2008 |
| 卷号 | 310期号:10页码:2508-2513 |
| 关键词 | characterization |
| ISSN号 | 0022-0248 |
| 通讯作者 | li, c, xiamen univ, dept phys, semicond photon res ctr, xiamen 361005, peoples r china. 电子邮箱地址: lich@xmu.edu.cn ; jzyu@red.semi.ac.cn |
| 中文摘要 | high-quality ge epilayer on si(1 0 0) substrate with an inserted low-temperature ge seed layer and a thin si0.77ge0.23 layer was grown by ultrahigh vacuum chemical vapor deposition. the epitaxial ge layer with surface root-mean-square roughness of 0.7 nm and threading dislocation density of 5 x 10(5) cm(-2) was obtained. the influence of low temperature ge seed layer on the quality of ge epilayer was investigated. we demonstrated that the relatively higher temperature (350 degrees c) for the growth of ge seed layer significantly improved the crystal quality and the hall hole mobility of the ge epilayer. (c) 2008 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-08 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/6650]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou ZW,Li C,Lai HK,et al. The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition[J]. journal of crystal growth,2008,310(10):2508-2513. |
| APA | Zhou ZW,Li C,Lai HK,Chen SY,&Yu JZ.(2008).The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition.journal of crystal growth,310(10),2508-2513. |
| MLA | Zhou ZW,et al."The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition".journal of crystal growth 310.10(2008):2508-2513. |
入库方式： OAI收割
来源：半导体研究所
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